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A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown

Surface & coatings technology, 2020-10, Vol.399, p.126123, Article 126123

2020

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Green second-harmonic generation in a periodically poled planar GaN waveguide

Optical and quantum electronics, 2024-03, Vol.56 (5), Article 778

2024

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FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry

Journal of materials science. Materials in electronics, 2021-06, Vol.32 (11), p.14532-14541

2021

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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Journal of electronic materials, 2016-07, Vol.45 (7), p.3290-3299

2016

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Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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Electrochemical synthesis and optical characterization of copper selenide nanowire arrays within the alumina pores

Journal of crystal growth, 2006-09, Vol.294 (2), p.343-348

2006

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GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Journal of crystal growth, 2015-08, Vol.424, p.28-32

2015

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Journal of physics. D, Applied physics, 2019-08, Vol.52 (32), p.325105

2019

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Copper selenide nanowires and nanocrystallites in alumina: Carrier relaxation, recombination, and trapping

Journal of applied physics, 2007-06, Vol.101 (11), p.113715-113715-9

2007

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Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Journal of electronic materials, 2014-07, Vol.43 (7), p.2667-2675

2014

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Near-IR absorption saturation and mechanism of picosecond recovery dynamics of copper selenide nanostructured via alumina

Journal of applied physics, 2009-06, Vol.105 (11), p.113519-113519-8

2009

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Photo-induced transmittance in copper–selenide nanowires

Optical materials, 2008-01, Vol.30 (5), p.743-745

2008

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Journal of physics. D, Applied physics, 2016-12, Vol.49 (50), p.505101

2016

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A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser

Journal of physics. D, Applied physics, 2015-07, Vol.48 (28), p.285104-9

2015

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Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15007

2019

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Effects of selenium treatment on composition and photoluminescence properties of porous silicon

Journal of luminescence, 2007-12, Vol.127 (2), p.431-434

2007

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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2015-01, Vol.44 (1), p.188-193

2015

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Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.689-692

2012

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Aluminum Oxide Photonic Crystals Grown by a New Hybrid Method

Advanced materials (Weinheim), 2001-10, Vol.13 (20), p.1574-1577

2001

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Laser pulse assisted nanoimprint lithography

Thin solid films, 2004-04, Vol.453-454, p.13-15

2004

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Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-07, Vol.546 (1), p.247-251

2005

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Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nm

Optical materials, 2013-10, Vol.35 (12), p.2171-2174

2013

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Fabrication of photonic structures by means of interference lithography and reactive ion etching

Applied surface science, 2002-01, Vol.186 (1), p.599-603

2002

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Growth peculiarities of aluminum anodic oxide at high voltages in diluted phosphoric acid

Journal of crystal growth, 2001-12, Vol.233 (3), p.591-598

2001

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Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides

Journal of physics. D, Applied physics, 2008-01, Vol.41 (1), p.015103-015103 (5)

2008

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A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown

Green second-harmonic generation in a periodically poled planar GaN waveguide

FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry

Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Electrochemical synthesis and optical characterization of copper selenide nanowire arrays within the alumina pores

GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Copper selenide nanowires and nanocrystallites in alumina: Carrier relaxation, recombination, and trapping

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Near-IR absorption saturation and mechanism of picosecond recovery dynamics of copper selenide nanostructured via alumina

Photo-induced transmittance in copper–selenide nanowires

Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser

Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes

Effects of selenium treatment on composition and photoluminescence properties of porous silicon

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells

Aluminum Oxide Photonic Crystals Grown by a New Hybrid Method

Laser pulse assisted nanoimprint lithography

Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nm

Fabrication of photonic structures by means of interference lithography and reactive ion etching

Growth peculiarities of aluminum anodic oxide at high voltages in diluted phosphoric acid

Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides

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