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The Past, Present, and Future of Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1678-1687

Soref, R.

2006

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The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Journal of applied physics, 2010-08, Vol.108 (3), p.033107-033107-6

2010

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Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Practical enhancement of photoluminescence by metal nanoparticles

Applied physics letters, 2009-03, Vol.94 (10), p.101103-101103-3

2009

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Plasmonic light-emission enhancement with isolated metal nanoparticles and their coupled arrays

Journal of the Optical Society of America. B, Optical physics, 2008-10, Vol.25 (10), p.1748

2008

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Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

Applied physics letters, 2013-05, Vol.102 (18)

2013

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Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Practical limits of absorption enhancement near metal nanoparticles

Applied physics letters, 2009-02, Vol.94 (7), p.071103-071103-3

2009

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IR permittivities for silicides and doped silicon

Journal of the Optical Society of America. B, Optical physics, 2010-04, Vol.27 (4), p.730

2010

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Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Applied physics letters, 2007-06, Vol.90 (25)

2007

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SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Applied physics letters, 2001-01, Vol.78 (4), p.401-403

2001

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Electrooptical effects in silicon

IEEE journal of quantum electronics, 1987-01, Vol.23 (1), p.123-129

1987

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Population-inversion and gain estimates for a semiconductor TASER

IEEE journal of quantum electronics, 2001-01, Vol.37 (1), p.153-158

2001

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Electroluminescence efficiency enhancement using metal nanoparticles

Applied physics letters, 2008-07, Vol.93 (2), p.021120-021120-3

2008

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Franz-Keldysh electro-absorption modulation in germanium-tin alloys

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Tunable microwave filtering using high dispersion fiber time delays

IEEE photonics technology letters, 1994-07, Vol.6 (7), p.831-832

1994

Volltextzugriff (PDF)

GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source

IEEE photonics journal, 2017-10, Vol.9 (5), p.1-11

2017

Volltextzugriff (PDF)

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

IEEE journal of quantum electronics, 1990-01, Vol.26 (1), p.113-122

1990

Volltextzugriff (PDF)

Optical band gap of the ternary semiconductor Si1-x-yGexCy

Journal of applied physics, 1991-08, Vol.70 (4), p.2470-2472

SOREF, R. A

1991

Volltextzugriff (PDF)

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths

Journal of applied physics, 2003-03, Vol.93 (6), p.3194-3197

2003

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Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillators

Journal of applied physics, 1995-12, Vol.78 (12), p.7398-7400

1995

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Design of quantum-dot lasers with an indirect bandgap short-period Superlattice for reducing the linewidth enhancement factor

IEEE photonics technology letters, 2004-10, Vol.16 (10), p.2203-2205

2004

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Observation of type-I and type-II excitons in strained Si∕SiGe quantum-well structures

Applied physics letters, 2007-08, Vol.91 (7)

2007

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The Past, Present, and Future of Silicon Photonics

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Practical enhancement of photoluminescence by metal nanoparticles

Plasmonic light-emission enhancement with isolated metal nanoparticles and their coupled arrays

Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Practical limits of absorption enhancement near metal nanoparticles

IR permittivities for silicides and doped silicon

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Electrooptical effects in silicon

Population-inversion and gain estimates for a semiconductor TASER

Electroluminescence efficiency enhancement using metal nanoparticles

Franz-Keldysh electro-absorption modulation in germanium-tin alloys

Tunable microwave filtering using high dispersion fiber time delays

GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Optical band gap of the ternary semiconductor Si1-x-yGexCy

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths

Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillators

Design of quantum-dot lasers with an indirect bandgap short-period Superlattice for reducing the linewidth enhancement factor

Observation of type-I and type-II excitons in strained Si∕SiGe quantum-well structures

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