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Comparative studies of metamodelling techniques under multiple modelling criteria

Structural and multidisciplinary optimization, 2001-12, Vol.23 (1), p.1-13

2001

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Kinetics of the Amorphous →γ→α Transformations in Aluminum Oxide: Effect of Crystallographic Orientation

Journal of the American Ceramic Society, 1998-01, Vol.81 (1), p.61-66

1998

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InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy

Journal of applied physics, 2001-05, Vol.89 (9), p.4815-4823

2001

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Effects of phosphorus doping on boron transient enhanced diffusion in silicon

Applied physics letters, 1997-03, Vol.70 (9), p.1146-1148

1997

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Hydrogen catalyzed crystallization of strontium titanate

Journal of applied physics, 1994-09, Vol.76 (5), p.2711-2718

1994

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Use of kriging models to approximate deterministic computer models

AIAA journal, 2005-04, Vol.43 (4), p.853-863

2005

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High depth resolution Rutherford scattering using forward angles

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-05, Vol.100 (1), p.159-164

1995

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Extended defect formation and the flux of interstitials in Si-ion implanted silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127, p.94-97

1997

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Ion implantation induced selective area exfoliation of InP and GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.381-385

1999

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Suppression of dislocation formation in silicon by carbon implantation

Applied physics letters, 1995-11, Vol.67 (19), p.2857-2859

1995

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Secondary defect formation in self-ion irradiated silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1), p.216-221

1995

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Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-06, Vol.91 (1-4), p.60-62

1994

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Hydrogen assisted crystallisation of strontium titanate

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993, Vol.80, p.1178-1181

1993

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Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Applied physics letters, 2005-06, Vol.86 (24)

2005

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Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching

Applied physics letters, 2002-12, Vol.81 (25), p.4826-4828

2002

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Calculation of Bond Eigenfunction Matrix Elements with the Vector Model

The Journal of chemical physics, 1956-01, Vol.25 (6), p.1297-1298

Simpson, W. T.

1956

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Annealing behavior of implanted helium in indium phosphide

Applied physics letters, 2001-01, Vol.78 (2), p.207-209

2001

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Polarizations of Electronic Transitions from Azimuthal Variation in Fluorescence Intensity—with Application to Biphenyl

The Journal of chemical physics, 1970-01, Vol.53 (11), p.4237-4244

1970

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Consolidated Variation Perturbation Theory

The Journal of chemical physics, 1958-01, Vol.28 (5), p.925-928

1958

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Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Applied physics letters, 1999-04, Vol.74 (16), p.2304-2306

1999

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The Excited Electronic State of the 2600A Transition in Benzene

The Journal of chemical physics, 1953-01, Vol.21 (5), p.940-940

1953

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Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire

Applied physics letters, 1995-08, Vol.67 (7), p.924-926

1995

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Theoretical Electronic Spectrum of the Allyl System

The Journal of chemical physics, 1957-01, Vol.27 (1), p.20-23

1957

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Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

Journal of applied physics, 1995-11, Vol.78 (9), p.5412-5421

1995

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Experimental and Theoretical Study of Sigma-Bond Electronic Transitions in Alkanes

The Journal of chemical physics, 1967-07, Vol.47 (2), p.430-448

1967

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Comparative studies of metamodelling techniques under multiple modelling criteria

Kinetics of the Amorphous →γ→α Transformations in Aluminum Oxide: Effect of Crystallographic Orientation

InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy

Effects of phosphorus doping on boron transient enhanced diffusion in silicon

Hydrogen catalyzed crystallization of strontium titanate

Use of kriging models to approximate deterministic computer models

High depth resolution Rutherford scattering using forward angles

Extended defect formation and the flux of interstitials in Si-ion implanted silicon

Ion implantation induced selective area exfoliation of InP and GaAs

Suppression of dislocation formation in silicon by carbon implantation

Secondary defect formation in self-ion irradiated silicon

Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3

Hydrogen assisted crystallisation of strontium titanate

Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching

Calculation of Bond Eigenfunction Matrix Elements with the Vector Model

Annealing behavior of implanted helium in indium phosphide

Polarizations of Electronic Transitions from Azimuthal Variation in Fluorescence Intensity—with Application to Biphenyl

Consolidated Variation Perturbation Theory

Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

The Excited Electronic State of the 2600A Transition in Benzene

Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire

Theoretical Electronic Spectrum of the Allyl System

Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

Experimental and Theoretical Study of Sigma-Bond Electronic Transitions in Alkanes

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