UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Chemical vapor deposition of highly dispersed Pt nanoparticles on multi-walled carbon nanotubes for use as fuel-cell electrodes

Carbon (New York), 2011-04, Vol.49 (4), p.1491-1501

2011

Volltextzugriff (PDF)

Theoretical Investigation of the Adsorption and C–C Bond Scission of CCH3 on the (111) and (100) Surfaces of Pd: Comparison with Pt

Journal of physical chemistry. C, 2013-09, Vol.117 (35), p.18131-18138

2013

Volltextzugriff (PDF)

Angular dependences of SiO2 etch rates in C4F6/O2/Ar and C4F6/CH2F2/O2/Ar plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-09, Vol.30 (5)

2012

Volltextzugriff (PDF)

Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4

Thin solid films, 2009-08, Vol.517 (19), p.5695-5699

2009

Volltextzugriff (PDF)

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2007-09, Vol.25 (5), p.1395-1401

2007

Volltextzugriff (PDF)

Effect of leaning angle of gecko-inspired slanted polymer nanohairs on dry adhesion

Applied physics letters, 2010-01, Vol.96 (4)

2010

Volltextzugriff (PDF)

Angular dependence of SiO2 etching in a fluorocarbon plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-11, Vol.18 (6), p.2791-2798

2000

Volltextzugriff (PDF)

Monitoring of an Interlayer Between Si(100) and a TiO2 Layer Formed During Cyclic CVD

Chemical vapor deposition, 2006-11, Vol.12 (11), p.659-664

2006

Volltextzugriff (PDF)

Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams

Surface & coatings technology, 2005-04, Vol.193 (1-3), p.75-80

2005

Volltextzugriff (PDF)

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-09, Vol.20 (5), p.1574-1581

2002

Volltextzugriff (PDF)

Surface decomposition mechanism of Ti(OC 3H 7) 4 on a platinum surface

Thin solid films, 2002-04, Vol.409 (1), p.98-104

2002

Volltextzugriff (PDF)

Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-09, Vol.20 (5), p.1808-1814

2002

Volltextzugriff (PDF)

Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-05, Vol.19 (3), p.730-735

2001

Volltextzugriff (PDF)

Sandwich-Type Laminated Nanocomposites Developed by Selective Dip-Coating of Carbon Nanotubes

Advanced materials (Weinheim), 2007-02, Vol.19 (3), p.427-432

2007

Volltextzugriff (PDF)

Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 9), p.5782-5786

2002

Volltextzugriff (PDF)

Angular distribution of particles sputtered from Si bottom in a CHF3 plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-09, Vol.24 (5), p.1807-1811

2006

Volltextzugriff (PDF)

Interactive relationships between sidewall and bottom etch rates, as-affected by sidewall angle, during SiO2 etching in a CHF3 plasma

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-07, Vol.24 (4), p.1746-1754

2006

Volltextzugriff (PDF)

Effect of Oxygen Contamination on the Deposition and Etching Properties of Si‐H‐Cl‐O and Si‐H‐F‐O Systems

Journal of the Electrochemical Society, 1995-07, Vol.142 (7), p.2405-2410

1995

Volltextzugriff (PDF)

Thermodynamic Evaluation of Equilibrium Compositions in the Si‐H‐F System

Journal of the Electrochemical Society, 1992-12, Vol.139 (12), p.3539-3544

1992

Volltextzugriff (PDF)

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-11, Vol.22 (6), p.2580-2588

2004

Volltextzugriff (PDF)

Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process

MRS proceedings, 1995, Vol.389, Article 125

1995

Volltextzugriff (PDF)

Effect of ion energy and incident angle on the modification of a porous low dielectric-constant material in an O 2 plasma ashing process

Surface & coatings technology, 2003-09, Vol.174, p.835-838

2003

Volltextzugriff (PDF)

Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.713-719

2005

Volltextzugriff (PDF)

Effect of sidewall roughness on the bottom etch properties of an SiO2 trench produced in a CF4 plasma

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-07, Vol.22 (4), p.1953-1957

2004

Volltextzugriff (PDF)

Effect of sidewall properties on the bottom microtrench during SiO2 etching in a CF4 plasma

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-03, Vol.23 (2), p.425-432

2005

Volltextzugriff (PDF)

1 – 25 von 36

Suche als RSS-Feed

Aktive Filter

ThemaPhysics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(30)
Mit Volltextzugriff
(31)

Publikationsform

Artikel
(34)
Tagungsberichte
(2)

Sprache

Englisch
(36)

Erscheinungsjahr

n.n

Kollektion

AIP Journals
(22)
Publisher website
(16)
Ingenta
(6)
Elsevier ScienceDirect Journals Complete
(6)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(5)
Wiley Online Library
(2)
Wiley Online Library Full Collection 2018
(1)
Springer Journals
(1)

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Chemical vapor deposition of highly dispersed Pt nanoparticles on multi-walled carbon nanotubes for use as fuel-cell electrodes

Theoretical Investigation of the Adsorption and C–C Bond Scission of CCH3 on the (111) and (100) Surfaces of Pd: Comparison with Pt

Angular dependences of SiO2 etch rates in C4F6/O2/Ar and C4F6/CH2F2/O2/Ar plasmas

Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

Effect of leaning angle of gecko-inspired slanted polymer nanohairs on dry adhesion

Angular dependence of SiO2 etching in a fluorocarbon plasma

Monitoring of an Interlayer Between Si(100) and a TiO2 Layer Formed During Cyclic CVD

Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

Surface decomposition mechanism of Ti(OC 3H 7) 4 on a platinum surface

Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

Sandwich-Type Laminated Nanocomposites Developed by Selective Dip-Coating of Carbon Nanotubes

Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma

Angular distribution of particles sputtered from Si bottom in a CHF3 plasma

Interactive relationships between sidewall and bottom etch rates, as-affected by sidewall angle, during SiO2 etching in a CHF3 plasma

Effect of Oxygen Contamination on the Deposition and Etching Properties of Si‐H‐Cl‐O and Si‐H‐F‐O Systems

Thermodynamic Evaluation of Equilibrium Compositions in the Si‐H‐F System

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases

Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process

Effect of ion energy and incident angle on the modification of a porous low dielectric-constant material in an O 2 plasma ashing process

Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching

Effect of sidewall roughness on the bottom etch properties of an SiO2 trench produced in a CF4 plasma

Effect of sidewall properties on the bottom microtrench during SiO2 etching in a CF4 plasma

Aktive Filter

Suchergebnisse filtern