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Low-Power Wearable Breath Monitoring Device With Humidity- and Ammonia-Sensing Functions (May 2022)

IEEE sensors journal, 2022-10, Vol.22 (19), p.18295-18305

2022

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IEEE_Xplore

Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3476-3481

2017

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IEEE_Xplore

Barium titanate piezoelectric-film-based beam-array airflow sensor for wearable breath-monitoring application

Journal of micromechanics and microengineering, 2022-01, Vol.32 (1), p.15009

2022

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Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1604-1610

2018

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IEEE_Xplore

All-optical modulation based on silicon quantum dot doped SiOx:Si-QD waveguide

Laser & photonics reviews, 2014-09, Vol.8 (5), p.766-776

2014

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Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2720-2725

2009

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IEEE_Xplore

Simulation and Investigation of Random Grain-Boundary-Induced Variabilities for Stackable NAND Flash Using 3-D Voronoi Grain Patterns

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1211-1214

2014

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IEEE_Xplore

Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3042-3047

2008

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IEEE_Xplore

Stamping Tool Conditions Diagnosis: A Deep Metric Learning Approach

Applied sciences, 2021-08, Vol.11 (15), p.6959

2021

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Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach

IEEE transactions on electron devices, 2013-04, Vol.60 (4), p.1485-1489

2013

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IEEE_Xplore

Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.2038-2044

2013

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IEEE_Xplore

Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2445-2451

2017

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IEEE_Xplore

On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2285-2290

2009

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IEEE_Xplore

Systematic Quantification of Cell Confluence in Human Normal Oral Fibroblasts

Applied sciences, 2020-12, Vol.10 (24), p.9146

2020

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Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1710-1715

2015

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IEEE_Xplore

Design and Analysis of Robust Tunneling FET SRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1092-1098

2013

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IEEE_Xplore

Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.625-630

2016

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IEEE_Xplore

Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3596-3600

2013

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IEEE_Xplore

Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2227-2234

2012

Link zum Volltext
IEEE_Xplore

Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III-V-on-Insulator nMOSFETs

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.339-344

2016

Link zum Volltext
IEEE_Xplore

Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.107-113

2015

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IEEE_Xplore

A novel approach to fabricate high performance electrically tunable fiber device based on well-aligned liquid crystal- infiltrated hollow core fiber

Optics and laser technology, 2023-09, Vol.164, p.109416, Article 109416

2023

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Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

ACS photonics, 2016-05, Vol.3 (5), p.806-818

2016

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A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High- k Gate Dielectric

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.530-535

2012

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IEEE_Xplore

A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.284-290

2009

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IEEE_Xplore

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Low-Power Wearable Breath Monitoring Device With Humidity- and Ammonia-Sensing Functions (May 2022)

Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

Barium titanate piezoelectric-film-based beam-array airflow sensor for wearable breath-monitoring application

Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

All-optical modulation based on silicon quantum dot doped SiOx:Si-QD waveguide

Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

Simulation and Investigation of Random Grain-Boundary-Induced Variabilities for Stackable NAND Flash Using 3-D Voronoi Grain Patterns

Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs

Stamping Tool Conditions Diagnosis: A Deep Metric Learning Approach

Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach

Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET

Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs

On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose

Systematic Quantification of Cell Confluence in Human Normal Oral Fibroblasts

Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist

Design and Analysis of Robust Tunneling FET SRAM

Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications

Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET

Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits

Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III-V-on-Insulator nMOSFETs

Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET

A novel approach to fabricate high performance electrically tunable fiber device based on well-aligned liquid crystal- infiltrated hollow core fiber

Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High- k Gate Dielectric

A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs

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