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Monolithic growth of ultrathin Ge nanowires on Si(001)

Physical review letters, 2012-08, Vol.109 (8), p.085502-085502, Article 085502

2012

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Strain engineering in Ge/GeSn core/shell nanowires

Applied physics letters, 2019-09, Vol.115 (11)

2019

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Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Physical chemistry chemical physics : PCCP, 2022-10, Vol.24 (39), p.24487-24494

2022

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Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

Nano letters, 2016-12, Vol.16 (12), p.7930-7936

2016

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GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Journal of applied physics, 2016-02, Vol.119 (5)

2016

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Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Physical review letters, 2012-02, Vol.108 (5), p.055503-055503, Article 055503

2012

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Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Surface science reports, 2013-11, Vol.68 (3-4), p.390-417

2013

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Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

Physical review letters, 2009-01, Vol.102 (2), p.025502-025502, Article 025502

2009

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

IEEE electron device letters, 2010-10, Vol.31 (10), p.1083-1085

2010

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Nanotechnology, 2016-10, Vol.27 (42), p.425301-425301

2016

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Strain release management in SiGe/Si films by substrate patterning

Applied physics letters, 2014-12, Vol.105 (24)

2014

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One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

Physical review letters, 2012-07, Vol.109 (2), p.025505-025505, Article 025505

2012

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Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

Physical review letters, 2010-10, Vol.105 (16), p.166102-166102, Article 166102

2010

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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Nanoscale research letters, 2010-12, Vol.5 (12), p.1873-1877

2010

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Electronic properties of semiconducting silicides: fundamentals and recent predictions

Thin solid films, 2004-08, Vol.461 (1), p.141-147

2004

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Site-Controlled Natural GaAs(111) Quantum Dots Fabricated on Vertical GaAs/Ge Microcrystals on Deeply Patterned Si(001) Substrates

Nanoscience and nanotechnology letters, 2017-07, Vol.9 (7), p.1108-1113

2017

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A multiscale model of the plasma assisted deposition of crystalline silicon

Surface & coatings technology, 2007-09, Vol.201 (22), p.8863-8867

2007

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Integration of MOSFETs with SiGe dots as stressor material

Solid-state electronics, 2011-06, Vol.60 (1), p.75-83

2011

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Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

Applied surface science, 2021-04, Vol.545, p.148948, Article 148948

2021

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A Measurement of Ω from the North American Test Flight of Boomerang

The Astrophysical journal, 2000-06, Vol.536 (2), p.L63-L66

2000

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Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant { 111 } Facets

Physical review letters, 2007-04, Vol.98 (17), Article 176102

2007

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Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

Applied physics letters, 2013-08, Vol.103 (8), p.83109

2013

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Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics

Journal of physics. Condensed matter, 2002-10, Vol.14 (41), p.9535-9553

2002

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Surface energies and surface relaxation at TiSi2 competing phases

Surface science, 2001-05, Vol.479 (1-3), p.201-212

2001

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Monolithic growth of ultrathin Ge nanowires on Si(001)

Strain engineering in Ge/GeSn core/shell nanowires

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Strain release management in SiGe/Si films by substrate patterning

One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Electronic properties of semiconducting silicides: fundamentals and recent predictions

Site-Controlled Natural GaAs(111) Quantum Dots Fabricated on Vertical GaAs/Ge Microcrystals on Deeply Patterned Si(001) Substrates

A multiscale model of the plasma assisted deposition of crystalline silicon

Integration of MOSFETs with SiGe dots as stressor material

Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

A Measurement of Ω from the North American Test Flight of Boomerang

Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant { 111 } Facets

Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics

Surface energies and surface relaxation at TiSi2 competing phases

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