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Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs

Physical review letters, 1994-08, Vol.73 (5), p.716-719

1994

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Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Applied physics letters, 2008-08, Vol.93 (7)

2008

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Calculation of the energy levels in InAs/GaAs quantum dots

Solid state communications, 1994, Vol.92 (5), p.437-442

1994

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One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Journal of crystal growth, 2008-07, Vol.310 (15), p.3413-3415

2008

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Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Applied physics letters, 1985-11, Vol.47 (10), p.1099-1101

1985

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Nano-fabrication with focused ion beams

Microelectronic engineering, 2001-09, Vol.57, p.865-875

2001

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Performance of the electronic readout of the ATLAS liquid argon calorimeters

Journal of instrumentation, 2010-09, Vol.5 (9), p.P09003-P09003, Article P09003

2010

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Search for extra dimensions in diphoton events from proton–proton collisions at $\sqrt {s} = 7\,$ TeV in the ATLAS detector at the LHC

New journal of physics, 2013-04, Vol.15 (4), p.43007

2013

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Hartree-like calculations of energy levels in quantum wires

Solid state communications, 1994-07, Vol.91 (1), p.39-43

1994

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Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Journal of crystal growth, 1993-02, Vol.127 (1), p.536-540

1993

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Gain modeling of strained InGaAsP based MQW optical amplifiers

IEEE photonics technology letters, 1997-11, Vol.9 (11), p.1475-1477

1997

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Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

Journal of applied physics, 1992-05, Vol.71 (10), p.5012-5015

1992

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InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications

Solid-state electronics, 1996-01, Vol.40 (1-8), p.807-814

1996

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Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

Journal of applied physics, 1996-03, Vol.79 (5), p.2332-2336

1996

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GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing

Applied physics letters, 1996-07, Vol.69 (1), p.61-63

1996

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Investigation of reactive ion etch-induced damage in InP surfaces using a noncontact photothermal radiometric probe

Applied surface science, 1991-06, Vol.50 (1), p.281-284

1991

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High resolution electron microscopy of InAs/GaAs strained-layer superlattices

Journal of crystal growth, 1987-02, Vol.81 (1), p.121-129

1987

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Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

Physical review. B, Condensed matter, 1987-04, Vol.35 (12), p.6207-6212

1987

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Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate

Journal of applied physics, 1986-04, Vol.59 (7), p.2447-2450

1986

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Fabrication of quantum wires by selective intermixing induced in GaAs/AlGaAs quantum well heterostructures by SiO2 capping and subsequent annealing

Superlattices and microstructures, 1995-01, Vol.18 (3), p.229-237

1995

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Optical properties of strained InxGa1−xAs multi quantum well structures

Surface science, 1984-07, Vol.142 (1-3), p.509-512

1984

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Evidence of depth and lateral diffusion of defects during focused ion beam implantation

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-07, Vol.16 (4), p.1919-1927

1998

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Interdiffusion of GaAs/GaAlAs quantum wells enhanced by low energy gallium focused ion beam implantation

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-09, Vol.9 (5), p.2679-2682

1991

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Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Calculation of the energy levels in InAs/GaAs quantum dots

One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Nano-fabrication with focused ion beams

Performance of the electronic readout of the ATLAS liquid argon calorimeters

Search for extra dimensions in diphoton events from proton–proton collisions at $\sqrt {s} = 7\,$ TeV in the ATLAS detector at the LHC

Hartree-like calculations of energy levels in quantum wires

Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Gain modeling of strained InGaAsP based MQW optical amplifiers

Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications

Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing

Investigation of reactive ion etch-induced damage in InP surfaces using a noncontact photothermal radiometric probe

High resolution electron microscopy of InAs/GaAs strained-layer superlattices

Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate

Fabrication of quantum wires by selective intermixing induced in GaAs/AlGaAs quantum well heterostructures by SiO2 capping and subsequent annealing

Optical properties of strained InxGa1−xAs multi quantum well structures

Evidence of depth and lateral diffusion of defects during focused ion beam implantation

Interdiffusion of GaAs/GaAlAs quantum wells enhanced by low energy gallium focused ion beam implantation

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