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Theoretical Study on All-Dielectric Elliptic Cross Metasurface Sensor Governed by Bound States in the Continuum

Materials, 2023-03, Vol.16 (5), p.2113

2023

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A low noise transimpedance amplifier for optical receiver

Review of scientific instruments, 2021-03, Vol.92 (3)

2021

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Circularly symmetric algorithm for UWB RF signal receiving channel based on noise cancellation

Open Physics, 2020-11, Vol.18 (1), p.779-789

2020

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An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

IEEE photonics journal, 2019-04, Vol.11 (2), p.1-10

2019

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Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

IEEE photonics journal, 2019-06, Vol.11 (3), p.1-10

2019

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Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

IEEE photonics journal, 2017-10, Vol.9 (5), p.1-8

2017

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High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process

IEEE photonics technology letters, 2015-01, Vol.27 (2), p.121-124

2015

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Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects

Journal of semiconductors, 2015-07, Vol.36 (7), p.75002

2015

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Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Journal of semiconductors, 2015-12, Vol.36 (12), p.1-13

陈弘达张赞黄北举毛陆虹张赞允

2015

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Liquid Pressure Sensing System With Coupling RFID and HMM Based on Distance Measurement

IEEE sensors journal, 2021-01, Vol.21 (2), p.1051-1058

2021

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A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

Journal of semiconductors, 2014, Vol.35 (1), p.112-116

闫冬毛陆虹苏秋杰、谢生张世林

2014

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A differential automatic gain control circuit with two-stage −10 to 50 dB tuning range VGAs

Journal of semiconductors, 2013-02, Vol.34 (2), p.25008-1-6

2013

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A novel power amplifier structure for RFID tag applications

Journal of semiconductors, 2011-12, Vol.32 (12), p.112-115

邓见保张世林李德张艳征毛陆虹谢生

2011

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A Linearity Improvement Front End with Subharmonic Current Commutating Passive Mixer for 2.4 GHz Direct Conversion Receiver in 0.13 μm CMOS Technology

Electronics (Basel), 2020-09, Vol.9 (9), p.1369

2020

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Switchable Dual-Functional Metasurface for THz Absorption and Electromagnetically Induced Transparency

Coatings (Basel), 2023-04, Vol.13 (5), p.816

2023

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A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

Journal of semiconductors, 2009-12, Vol.30 (12), p.125004

2009

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A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

Journal of semiconductors, 2009-10, Vol.30 (10), p.105010, Article 105010

2009

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Investigation of vacancy defect in InP crystal by positron lifetime measurement

The Journal of physics and chemistry of solids, 2008-02, Vol.69 (2), p.372-375

2008

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An approach to the optical interconnect made in standard CMOS process

Journal of semiconductors, 2009-05, Vol.30 (5), p.113-116

余长亮毛陆虹肖新东谢生张世林

2009

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On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

Electronics (Basel), 2020-06, Vol.9 (6), p.1049

2020

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A 2 Gb/s optical receiver with monolithically integrated MSM photodetector in standard CMOS process

Chinese science bulletin, 2011-07, Vol.56 (21), p.2281-2285

2011

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Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-08, Vol.133 (1), p.136-140

2006

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A novel lambda negative-resistance transistor in the 0.5μm standard CMOS process

Chinese science bulletin, 2012-03, Vol.57 (7), p.716-718

2012

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Indium phosphide crystal growth from phosphorus-rich melt

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.326-329

2004

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16-channel VCSEL based multiple chip modules

IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical, 2002, p.MH4-MH4

2002

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Theoretical Study on All-Dielectric Elliptic Cross Metasurface Sensor Governed by Bound States in the Continuum

A low noise transimpedance amplifier for optical receiver

Circularly symmetric algorithm for UWB RF signal receiving channel based on noise cancellation

An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process

Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Liquid Pressure Sensing System With Coupling RFID and HMM Based on Distance Measurement

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

A differential automatic gain control circuit with two-stage −10 to 50 dB tuning range VGAs

A novel power amplifier structure for RFID tag applications

A Linearity Improvement Front End with Subharmonic Current Commutating Passive Mixer for 2.4 GHz Direct Conversion Receiver in 0.13 μm CMOS Technology

Switchable Dual-Functional Metasurface for THz Absorption and Electromagnetically Induced Transparency

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

Investigation of vacancy defect in InP crystal by positron lifetime measurement

An approach to the optical interconnect made in standard CMOS process

On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

A 2 Gb/s optical receiver with monolithically integrated MSM photodetector in standard CMOS process

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

A novel lambda negative-resistance transistor in the 0.5μm standard CMOS process

Indium phosphide crystal growth from phosphorus-rich melt

16-channel VCSEL based multiple chip modules

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