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A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

Japanese journal of applied physics, 1996-02, Vol.35 (2B), p.865-868

1996

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[1,1'-Bis(diphenylphosphino)ferrocene]tri-chloro(phenylimido)rhenium(V) dichloromethane solvate

Acta crystallographica. Section C, Crystal structure communications, 1999-12, Vol.55, p.2018-2020

1999

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1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE: Optoelectronics in Korea

Optical and quantum electronics, 1995, Vol.27 (5), p.459-464

1995

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1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by organometallic chemical vapor deposition

Japanese journal of applied physics, 1992-05, Vol.31 (5A), p.1365-1371

1992

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1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

Optics and laser technology, 2005-03, Vol.37 (2), p.125-130

2005

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1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications

Optics and laser technology, 2004-04, Vol.36 (3), p.255-258

2004

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1.5μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays

Electronics letters, 1992, Vol.28 (9), p.824-826

1992

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1.5μm tensile-strained single quantum well 20-wavelength distributed feedback laser arrays

Electronics letters, 1992, Vol.28 (17), p.1585-1587

1992

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A 1.9 e^ Random Noise CMOS Image Sensor With Active Feedback Operation in Each Pixel

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2436-2445

2009

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IEEE_Xplore

“1/f” noise in thin metal films interacting with silicon substrates

Thin solid films, 1985-07, Vol.129 (3), p.195-204

1985

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1 GHz Pentacene Diode Rectifiers Enabled by Controlled Film Deposition on SAM-Treated Au Anodes

Advanced electronic materials, 2016-02, Vol.2 (2), p.n/a

2016

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A 1-Megapixel, progressive-scan image sensor with antiblooming control and lag-free operation

IEEE transactions on electron devices, 1991-05, Vol.38 (5), p.981-988

1991

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IEEE_Xplore

1-Methylphenanthro[3,4-b]thiophene: Determination of the tertiary structure in solution and in the crystalline state by NMR spectroscopy and X-ray diffraction

Journal of heterocyclic chemistry, 1985-03, Vol.22 (2), p.545-553

1985

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1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Applied physics letters, 2012-03, Vol.100 (13)

2012

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1-THz bandwidth C- and L-band optical sampling with a bit rate agile timebase

IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1148-1150

2002

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IEEE_Xplore

1-Year Outcomes with COMBO Stents in Small-Vessel Coronary Disease: Subgroup Analysis From the COMBO Collaboration

Cardiovascular revascularization medicine, 2020-12, Vol.21 (12), p.1542-1547

2020

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10 MeV electrons irradiation effects in variously doped n-GaN

Journal of applied physics, 2011-06, Vol.109 (12), p.123703-123703-8

2011

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A 100 Mbps, LED through-wafer optoelectronic link for multicomputer interconnection networks: Parallel computing with optical interconnects

Journal of parallel and distributed computing, 1997, Vol.41 (1), p.3-19

1997

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100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2006, p.311-313

2006

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IEEE_Xplore

10th Asia-Pacific Conference on Plasma Science and Technology

Thin solid films, 2011, Vol.519 (20), p.6637-6638

2011

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11B NMR study of GdB4

Physica. B, Condensed matter, 2006, Vol.378-80, p.598-599

2006

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11B NMR study of TbB4

Physica. B, Condensed matter, 2006, Vol.378-80, p.600-601

2006

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127I NMR study of quadrupolar echoes in KI

Journal of magnetic resonance (1969), 1992-07, Vol.98 (3), p.534-555

1992

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13C NMR Chemical Shifts and CH Coupling Constants of Substituted 4-Ylidenebutenolides

Spectroscopy letters, 1992-05, Vol.25 (3), p.339-347

1992

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A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

[1,1'-Bis(diphenylphosphino)ferrocene]tri-chloro(phenylimido)rhenium(V) dichloromethane solvate

1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE: Optoelectronics in Korea

1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by organometallic chemical vapor deposition

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications

1.5μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays

1.5μm tensile-strained single quantum well 20-wavelength distributed feedback laser arrays

A 1.9 e^ Random Noise CMOS Image Sensor With Active Feedback Operation in Each Pixel

“1/f” noise in thin metal films interacting with silicon substrates

1 GHz Pentacene Diode Rectifiers Enabled by Controlled Film Deposition on SAM-Treated Au Anodes

A 1-Megapixel, progressive-scan image sensor with antiblooming control and lag-free operation

1-Methylphenanthro[3,4-b]thiophene: Determination of the tertiary structure in solution and in the crystalline state by NMR spectroscopy and X-ray diffraction

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

1-THz bandwidth C- and L-band optical sampling with a bit rate agile timebase

1-Year Outcomes with COMBO Stents in Small-Vessel Coronary Disease: Subgroup Analysis From the COMBO Collaboration

10 MeV electrons irradiation effects in variously doped n-GaN

A 100 Mbps, LED through-wafer optoelectronic link for multicomputer interconnection networks: Parallel computing with optical interconnects

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

A 100nm copper/low-K bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

10th Asia-Pacific Conference on Plasma Science and Technology

11B NMR study of GdB4

11B NMR study of TbB4

127I NMR study of quadrupolar echoes in KI

13C NMR Chemical Shifts and CH Coupling Constants of Substituted 4-Ylidenebutenolides

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