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Flow period influence on uranium and trace elements release in water from the waste rock pile of the former La Commanderie uranium mine (France)

Journal of environmental radioactivity, 2019-11, Vol.208-209, p.106010-106010, Article 106010

2019

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Strontium binding by calcium silicate hydrates

Journal of colloid and interface science, 2006-08, Vol.300 (1), p.78-87

2006

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Behaviour of spent HTR fuel elements in aquatic phases of repository host rock formations

Nuclear Engineering and Design, 2006-03, Vol.236 (5), p.543-554

2006

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Optical characterizations of “P-down” bonded InP pump lasers

Microelectronics and reliability, 2021-11, Vol.126, p.114327, Article 114327

2021

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Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Journal of physics. D, Applied physics, 2021-11, Vol.54 (44), p.445106

2021

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Structure of the Bro1 domain protein BROX and functional analyses of the ALIX Bro1 domain in HIV-1 budding

PloS one, 2011-12, Vol.6 (12), p.e27466-e27466

2011

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Wave–structure interaction by a two–way coupling between a fully nonlinear potential flow model and a Navier–Stokes solver

Ocean engineering, 2024-09, Vol.308, Article 118209

2024

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Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon

Thin solid films, 2010-06, Vol.518 (16), p.4619-4622

2010

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Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1750-1753

2015

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Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

IEEE photonics technology letters, 2002-07, Vol.14 (7), p.893-895

2002

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Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

Journal of crystal growth, 1993-02, Vol.127 (1), p.550-554

1993

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Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing

Journal of crystal growth, 2006-02, Vol.288 (1), p.53-56

2006

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First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00–TM00 straight waveguides

Optical materials, 2007-12, Vol.30 (4), p.657-661

2007

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InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides

Materials science in semiconductor processing, 2006, Vol.9 (1), p.225-229

2006

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The effect of mounting-induced strain and defect on the properties of AlGaAs 808 nm LDs

Synthetic metals, 2002-03, Vol.127 (1), p.255-259

2002

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Leaching behaviour of unirradiated high temperature reactor (HTR) UO 2–ThO 2 mixed oxides fuel particles

Journal of Nuclear Materials, 2005, Vol.346 (1), p.32-39

2005

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Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes

Optical and quantum electronics, 2003-09, Vol.35 (12), p.1099-1106

2003

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Influence of the ordering of carbon vacancies on the electronic properties of TiC0.625

Solid state communications, 1986-09, Vol.59 (11), p.765-769

1986

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Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy

Applied physics letters, 1992-03, Vol.60 (10), p.1241-1243

1992

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Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

Physical review. B, Condensed matter, 1992-07, Vol.46 (3), p.1886-1888

1992

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Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions

Physical review. B, Condensed matter, 1993-03, Vol.47 (11), p.6465-6469

1993

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Order-disorder transition and structure of the ordered vacancy compound Nb6C5: powder neutron diffraction studies

Journal of physics. C, Solid state physics, 1985-02, Vol.18 (4), p.809-823

1985

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Electronic and chemical properties of hydrogen exposed GaAs(100) and (110) surfaces studied by photoemission

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-07, Vol.7 (4), p.882-887

1989

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Flow period influence on uranium and trace elements release in water from the waste rock pile of the former La Commanderie uranium mine (France)

Strontium binding by calcium silicate hydrates

Behaviour of spent HTR fuel elements in aquatic phases of repository host rock formations

Optical characterizations of “P-down” bonded InP pump lasers

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Structure of the Bro1 domain protein BROX and functional analyses of the ALIX Bro1 domain in HIV-1 budding

Wave–structure interaction by a two–way coupling between a fully nonlinear potential flow model and a Navier–Stokes solver

Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon

Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing

First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00–TM00 straight waveguides

InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides

The effect of mounting-induced strain and defect on the properties of AlGaAs 808 nm LDs

Leaching behaviour of unirradiated high temperature reactor (HTR) UO 2–ThO 2 mixed oxides fuel particles

Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes

Influence of the ordering of carbon vacancies on the electronic properties of TiC0.625

Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions

Order-disorder transition and structure of the ordered vacancy compound Nb6C5: powder neutron diffraction studies

Electronic and chemical properties of hydrogen exposed GaAs(100) and (110) surfaces studied by photoemission

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