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'Symbiotic' semiconductors: unusual and counter-intuitive Ge/Si/O interactions

Journal of physics. D, Applied physics, 2017-02, Vol.50 (10), p.105101

2017

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Integrated optimization of actuator placement and vibration control for piezoelectric adaptive trusses

Journal of sound and vibration, 2013-01, Vol.332 (1), p.17-32

2013

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The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

Nanoscale, 2014-05, Vol.6 (1), p.533-538

2014

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Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Effect of gadolinium on microstructure and rolling capability of AZ31 alloy

Journal of alloys and compounds, 2009-05, Vol.475 (1), p.227-232

2009

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Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Nanotechnology, 2018-05, Vol.29 (20), p.205601-205601

2018

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E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

Solid-state electronics, 2010-05, Vol.54 (5), p.505-508

2010

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Compositionally modulated microstructure in nano-layered Ni-P metallic glass composite coating prepared by electrodeposition

Surface & coatings technology, 2020-05, Vol.389, p.125636, Article 125636

2020

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Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance

Applied physics letters, 2012-11, Vol.101 (22)

2012

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Designer germanium quantum dot phototransistor for near infrared optical detection and amplification

Nanotechnology, 2015-02, Vol.26 (5), p.055203-055203

2015

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Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Sand accumulation on a wall in flows around a near-wall circular cylinder

Acta mechanica, 2008-03, Vol.196 (3-4), p.175-185

2008

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Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S89

2007

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Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4

Applied physics letters, 2014-10, Vol.105 (17)

2014

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Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowires

Journal of physics. D, Applied physics, 2016-05, Vol.49 (20), p.205102-205110

2016

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Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Applied physics letters, 2003-12, Vol.83 (22), p.4628-4630

2003

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Enhanced 400–600 nm photoresponsivity of metal–oxide–semiconductor diodes with multi-stack germanium quantum dots

Nanotechnology, 2008-06, Vol.19 (23), p.235203-235203

2008

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Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1−xGex-on-insulator

Nanotechnology, 2007-04, Vol.18 (14), p.145402-145402 (7)

2007

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Room temperature ferroelectric properties and leakage current characterics of Bi2FeMnO6/SrTiO3 bilayered thin films by chemical solution deposition

Physica status solidi. A, Applications and materials science, 2014-07, Vol.211 (7), p.1499-1502

2014

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Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

Nanotechnology, 2010-12, Vol.21 (50), p.505201-505201

2010

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Comparison of predesign parameters for mini-pole in-vacuo superconducting undulators

IEEE transactions on applied superconductivity, 2004-06, Vol.14 (2), p.580-584

2004

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Galvanic corrosion of Ni–Cu–Al composite coating and its anti-fouling property for metal pipeline in simulated geothermal water

Surface & coatings technology, 2012-05, Vol.206 (18), p.3728-3732

2012

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A thermal study on phase transition of high-energy electron-irradiated P(VDF–TrFE) 80/20 mol% copolymers

Materials chemistry and physics, 2003-07, Vol.81 (1), p.166-173

2003

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Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

Solid-state electronics, 2002, Vol.46 (1), p.39-44

2002

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