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Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯0) sapphire substrate

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Current applied physics, 2012-09, Vol.12, p.S41-S46

2012

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Fabrication of freestanding heteroepitaxial diamond substrate via micropatterns and microneedles

Applied physics express, 2016-03, Vol.9 (3), p.35504

2016

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Overgrowth of diamond layers on diamond microneedles: New concept for freestanding diamond substrate by heteroepitaxy

Diamond and related materials, 2016-06, Vol.66, p.77-82

2016

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Microneedle growth method as an innovative approach for growing freestanding single crystal diamond substrate: Detailed study on the growth scheme of continuous diamond layers on diamond microneedles

Diamond and related materials, 2017-05, Vol.75, p.34-38

2017

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Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

Journal of crystal growth, 2012-12, Vol.361, p.135-141

2012

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Influence of step morphology on the structural phase transition of the α-Al2O3(0001) surface

Applied physics letters, 2014-06, Vol.104 (22)

2014

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Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

Journal of crystal growth, 2014-10, Vol.403, p.38-42

2014

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Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.16504

2012

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Formation of 0.3-nm-high stepped polymer surface by thermal nanoimprinting

Applied physics express, 2014-05, Vol.7 (5), p.55202

2014

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Surface Planarization of GaN-on-Sapphire Template by Chemical Mechanical Polishing for Subsequent GaN Homoepitaxy

ECS journal of solid state science and technology, 2014-01, Vol.3 (5), p.P163-P168

2014

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Nanocontact printing of Au nanoarray onto atomically stepped ultrasmooth polymer sheets

Japanese Journal of Applied Physics, 2016-09, Vol.55 (9), p.98002

2016

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Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Advanced materials (Weinheim), 2021-10, Vol.33 (43), p.e2104564-n/a

2021

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Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing

Applied physics express, 2013-03, Vol.6 (3), p.35502

2013

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Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

Journal of applied physics, 2009-03, Vol.105 (5), p.053309-053309-6

2009

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Influence of Rapid Thermal Annealing and Substrate Terrace Width on Self-Organizing Formation of Periodic Straight Nanogroove Array on NiO(111) Epitaxial Thin Film

Japanese Journal of Applied Physics, 2012-06, Vol.51 (6), p.06FF16-06FF16-2

2012

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Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

Physica status solidi. A, Applications and materials science, 2024-09, Vol.221 (18), p.n/a

2024

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Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives

Applied surface science, 2014-02, Vol.292, p.531-536

2014

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Laser slicing of a diamond at the {100} plane using an irradiation sequence that restricts crack propagation along the {111} plane

Diamond and related materials, 2023-06, Vol.136, p.110045, Article 110045

2023

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Fabrication of Ferromagnetic Ni(111) Nanoparticles Embedded Epitaxially in (Mg,Ni)O Matrix by Reduction of (Mg0.5Ni0.5)O(111) Epitaxial Thin Film

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7), p.070206-070206-3

2011

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Atomic step-and-terrace surface of polyimide sheet for advanced polymer substrate engineering

Nanotechnology, 2016-07, Vol.27 (29), p.295603-295608

2016

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Decisive factors affecting plasma resistance and roughness formation in ArF photoresist

Journal of physics. D, Applied physics, 2010-10, Vol.43 (39), p.395204-395204

2010

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Improving plasma resistance and lowering roughness in an ArF photoresist by adding a chemical reaction inhibitor

Journal of physics. D, Applied physics, 2010-11, Vol.43 (46), p.465203

2010

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Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-09, Vol.27 (5), p.2117-2123

2009

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Anisotropic magnetization of epitaxial Ni nanogroove-arrays prepared by reduction of self-organized oxides

Applied surface science, 2012-10, Vol.259, p.208-212

2012

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Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯0) sapphire substrate

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Fabrication of freestanding heteroepitaxial diamond substrate via micropatterns and microneedles

Overgrowth of diamond layers on diamond microneedles: New concept for freestanding diamond substrate by heteroepitaxy

Microneedle growth method as an innovative approach for growing freestanding single crystal diamond substrate: Detailed study on the growth scheme of continuous diamond layers on diamond microneedles

Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

Influence of step morphology on the structural phase transition of the α-Al2O3(0001) surface

Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Formation of 0.3-nm-high stepped polymer surface by thermal nanoimprinting

Surface Planarization of GaN-on-Sapphire Template by Chemical Mechanical Polishing for Subsequent GaN Homoepitaxy

Nanocontact printing of Au nanoarray onto atomically stepped ultrasmooth polymer sheets

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing

Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

Influence of Rapid Thermal Annealing and Substrate Terrace Width on Self-Organizing Formation of Periodic Straight Nanogroove Array on NiO(111) Epitaxial Thin Film

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives

Laser slicing of a diamond at the {100} plane using an irradiation sequence that restricts crack propagation along the {111} plane

Fabrication of Ferromagnetic Ni(111) Nanoparticles Embedded Epitaxially in (Mg,Ni)O Matrix by Reduction of (Mg0.5Ni0.5)O(111) Epitaxial Thin Film

Atomic step-and-terrace surface of polyimide sheet for advanced polymer substrate engineering

Decisive factors affecting plasma resistance and roughness formation in ArF photoresist

Improving plasma resistance and lowering roughness in an ArF photoresist by adding a chemical reaction inhibitor

Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma

Anisotropic magnetization of epitaxial Ni nanogroove-arrays prepared by reduction of self-organized oxides

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