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Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures

Nano letters, 2016-08, Vol.16 (8), p.4849-4856

2016

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Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

Nano letters, 2010-02, Vol.10 (2), p.414-419

2010

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Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

Journal of physics. Condensed matter, 2006-01, Vol.18 (3), p.965-979

2006

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On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate

Semiconductors (Woodbury, N.Y.), 2022-05, Vol.56 (5), p.310-316

2022

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The Effect of Transition Metals on the Dielectric Properties of Diamond-Like Silicon–Carbon Films

Physics of the solid state, 2022-02, Vol.64 (2), p.85-93

2022

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Local structure of the SnTe topological crystalline insulator: Rhombohedral distortions emerging from the rocksalt phase

Physical review. B, Condensed matter and materials physics, 2014-10, Vol.90 (13), Article 134101

2014

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Ab-initio calculations and structural studies of (SiTe)2(Sb2Te3)n (n: 1, 2, 4 and 6) phase-change superlattice films

Physica status solidi. PSS-RRL. Rapid research letters, 2014-04, Vol.8 (4), p.302-306

2014

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Remote epitaxy using graphene enables growth of stress-free GaN

Nanotechnology, 2019-12, Vol.30 (50), p.505603-505603

2019

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Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

Journal of applied physics, 2000-03, Vol.87 (6), p.2926-2930

Kolobov, A. V.

2000

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Crystallization-induced short-range order changes in amorphous GeTe

Journal of physics. Condensed matter, 2004-11, Vol.16 (44), p.S5103-S5108

2004

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Formation of oriented layered MoS2 from amorphous thin film revealed by polarized x-ray absorption spectroscopy

Applied physics letters, 2022-11, Vol.121 (19)

2022

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Local structure of crystallized GeTe films

Applied physics letters, 2003-01, Vol.82 (3), p.382-384

2003

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Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms

Semiconductors (Woodbury, N.Y.), 2024-02, Vol.58 (2), p.120-123

2024

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Effects of electric and magnetic fields on the resistive switching operation of iPCM

Applied physics letters, 2020-05, Vol.116 (20)

2020

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A possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position

Journal of physics. Condensed matter, 2007-11, Vol.19 (45), p.455209-455209 (7)

2007

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Spatial Optimization of Fractionated Proton Therapy via Mathematical Modeling

Bulletin of the Lebedev Physics Institute, 2022-06, Vol.49 (6), p.174-179

2022

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Chalcogenide glasses as prospective materials for optical memories and optical data storage

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.677-680

2003

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The order-disorder transition in GeTe: Views from different length-scales

Applied physics letters, 2011-12, Vol.99 (23), p.231907-231907-3

2011

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Structural Transformation of Thin Ge2Sb2Te5 Films Produced by Ion-Plasma Co-Sputtering Under Laser Irradiation

Journal of electronic materials, 2023-04, Vol.52 (4), p.2492-2498

2023

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Enhanced crystallization of GeTe from an Sb2Te3 template

Applied physics letters, 2012-01, Vol.100 (2)

2012

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Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Journal of materials science. Materials in electronics, 2021-05, Vol.32 (10), p.14072-14078

2021

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Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

The Journal of physics and chemistry of solids, 2007-05, Vol.68 (5-6), p.1074-1078

2007

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As2S3 Glass Quenched in a Weak Magnetic Field

Surface investigation, x-ray, synchrotron and neutron techniques, 2023-10, Vol.17 (5), p.1162-1167

2023

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Ferroelectric switching in epitaxial GeTe films

APL materials, 2014-06, Vol.2 (6), p.066101-066101-7

2014

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Photodoping of amorphous chalcogenides by metals

Advances in physics, 1991-10, Vol.40 (5), p.625-684

1991

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Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures

Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate

The Effect of Transition Metals on the Dielectric Properties of Diamond-Like Silicon–Carbon Films

Local structure of the SnTe topological crystalline insulator: Rhombohedral distortions emerging from the rocksalt phase

Ab-initio calculations and structural studies of (SiTe)2(Sb2Te3)n (n: 1, 2, 4 and 6) phase-change superlattice films

Remote epitaxy using graphene enables growth of stress-free GaN

Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

Crystallization-induced short-range order changes in amorphous GeTe

Formation of oriented layered MoS2 from amorphous thin film revealed by polarized x-ray absorption spectroscopy

Local structure of crystallized GeTe films

Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms

Effects of electric and magnetic fields on the resistive switching operation of iPCM

A possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position

Spatial Optimization of Fractionated Proton Therapy via Mathematical Modeling

Chalcogenide glasses as prospective materials for optical memories and optical data storage

The order-disorder transition in GeTe: Views from different length-scales

Structural Transformation of Thin Ge2Sb2Te5 Films Produced by Ion-Plasma Co-Sputtering Under Laser Irradiation

Enhanced crystallization of GeTe from an Sb2Te3 template

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

As2S3 Glass Quenched in a Weak Magnetic Field

Ferroelectric switching in epitaxial GeTe films

Photodoping of amorphous chalcogenides by metals

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