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Determination of the dielectric constant of GaN in the kHz frequency range

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085006

2011

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Identification of radiative transitions in highly porous silicon

Journal of physics. Condensed matter, 1993-02, Vol.5 (7), p.L91-L98

1993

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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Journal of crystal growth, 2000-02, Vol.209 (2), p.486-491

2000

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Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

Semiconductor science and technology, 1988-07, Vol.3 (7), p.722-725

1988

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The origin of efficient luminescence in highly porous silicon

Journal of luminescence, 1994-04, Vol.60-61, p.297-301

1994

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Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Applied physics letters, 2000-02, Vol.76 (8), p.943-945

2000

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Photoluminescence study of the density-of-states between Landau levels in the quantum hall effect system

Solid state communications, 1988-08, Vol.67 (6), p.637-641

1988

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The effects of free carriers on the photoluminescence and photoluminescence excitation spectra of InGaAs-InP quantum wells

Semiconductor science and technology, 1988-07, Vol.3 (7), p.691-700

1988

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Electron mobilities and photoelectron lifetimes in AlGaAs/GaAs and InGaAs/GaAs quantum-well infrared detectors

Journal of applied physics, 1993-06, Vol.73 (11), p.7966-7968

1993

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Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctions

Journal of applied physics, 1986-07, Vol.60 (2), p.657-664

1986

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Transport and persistent photoconductivity in InGaAs/InP single quantum wells

Applied physics letters, 1986-11, Vol.49 (20), p.1360-1362

1986

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An experimental and theoretical study of intersubband transitions in InSb and InAs asymmetric doping superlattices

Semiconductor science and technology, 1995-08, Vol.10 (8), p.1103-1107

1995

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Localisation effects caused by the remote donors in modulation-doped quantum wells

Semiconductor science and technology, 1988-01, Vol.3 (1), p.12-17

1988

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Inter-sub-band absorption in InP/In0.53Ga0.47As multiple quantum wells

Semiconductor science and technology, 1988-06, Vol.3 (6), p.586-589

1988

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Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

Applied physics letters, 1987-07, Vol.51 (3), p.180-182

1987

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Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions

Journal of physics. C, Solid state physics, 1985-10, Vol.18 (29), p.5629-5636

1985

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GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Journal of applied physics, 1994-10, Vol.76 (7), p.4407-4412

1994

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Transport in InGaAs/InP heterostructures grown by MOCVD

Surface science, 1986-04, Vol.170 (1), p.470-479

1986

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ODMR of recombination centres in crystalline quartz

Journal of physics. C, Solid state physics, 1984-06, Vol.17 (16), p.2943-2951

1984

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Zeeman spectroscopy of vanadium-doped indium phosphide

Journal of physics. C, Solid state physics, 1984-12, Vol.17 (35), p.6455-6467

1984

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Zeeman spectroscopy of luminescence from vanadium-doped indium phosphide

Journal of physics. C, Solid state physics, 1983-07, Vol.16 (21), p.L767-L775

1983

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A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe

Journal of physics. C, Solid state physics, 1985-11, Vol.18 (33), p.6185-6198

1985

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The Spectroscopy of Porous Silicon

MRS proceedings, 1995, Vol.358, Article 465

1995

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Intersubband absorption and infrared modulation in GaAs/AlGaAs single quantum wells

Superlattices and microstructures, 1989, Vol.5 (4), p.587-589

1989

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Hot electron energy relaxation via acoustic phonon emission in InP/In0.53Ga0.47As heterostructures and single quantum wells

Solid-state electronics, 1988-03, Vol.31 (3-4), p.501-505

1988

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Determination of the dielectric constant of GaN in the kHz frequency range

Identification of radiative transitions in highly porous silicon

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

The origin of efficient luminescence in highly porous silicon

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Photoluminescence study of the density-of-states between Landau levels in the quantum hall effect system

The effects of free carriers on the photoluminescence and photoluminescence excitation spectra of InGaAs-InP quantum wells

Electron mobilities and photoelectron lifetimes in AlGaAs/GaAs and InGaAs/GaAs quantum-well infrared detectors

Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctions

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

An experimental and theoretical study of intersubband transitions in InSb and InAs asymmetric doping superlattices

Localisation effects caused by the remote donors in modulation-doped quantum wells

Inter-sub-band absorption in InP/In0.53Ga0.47As multiple quantum wells

Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions

GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Transport in InGaAs/InP heterostructures grown by MOCVD

ODMR of recombination centres in crystalline quartz

Zeeman spectroscopy of vanadium-doped indium phosphide

Zeeman spectroscopy of luminescence from vanadium-doped indium phosphide

A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe

The Spectroscopy of Porous Silicon

Intersubband absorption and infrared modulation in GaAs/AlGaAs single quantum wells

Hot electron energy relaxation via acoustic phonon emission in InP/In0.53Ga0.47As heterostructures and single quantum wells

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