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Surface orientation and stacking fault generation in strained epitaxial growth

Journal of applied physics, 1993-06, Vol.73 (11), p.7407-7411

1993

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Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs

Journal of electronic materials, 2000-11, Vol.29 (11), p.1333-1339

2000

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Applied physics letters, 1998-05, Vol.72 (18), p.2319-2321

1998

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Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Journal of applied physics, 2000-02, Vol.87 (3), p.1350-1355

2000

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Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions

Physica. C, Superconductivity, 1994-02, Vol.221 (1-2), p.46-52

1994

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Dislocation nucleation near the critical thickness in GeSi/Si strained layers

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1989-05, Vol.59 (5), p.1059-1073

1989

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Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 1997-05, Vol.28 (5), p.1157-1167

1997

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Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

Applied physics letters, 1993-05, Vol.62 (21), p.2722-2724

1993

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Reduced dislocation density in Ge/Si epilayers

Applied physics letters, 1991-05, Vol.58 (21), p.2357-2359

1991

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Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

Applied physics letters, 1990-08, Vol.57 (8), p.798-800

1990

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Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

Physica. C, Superconductivity, 1992-10, Vol.200 (3-4), p.409-412

KVAM, E. P

1992

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Dislocation-induced flux pinning interactions in YBa2Cu3O7

Physica. C, Superconductivity, 1994-08, Vol.229 (1-2), p.90-98

KVAM, E. P

1994

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Microstructural examination of extended crystal defects in silicon selective epitaxial growth

Journal of electronic materials, 1993-11, Vol.22 (11), p.1331-1339

1993

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Possible dislocation multiplication source in (001) semiconductor epitaxy

Applied physics letters, 1990-10, Vol.57 (16), p.1637-1639

1990

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The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires

Superconductor science & technology, 1994-08, Vol.7 (8), p.587-591

1994

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Effects of platinum and oxygenation on microstructure in YBa2Cu3O7-δ/Y2BaCuO5 bulk materials

Journal of electronic materials, 1994-11, Vol.23 (11), p.1131-1134

1994

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New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers

Physical review letters, 1989-01, Vol.62 (2), p.187-190

1989

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Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Journal of applied physics, 2006-10, Vol.100 (8), p.083514-083514-3

2006

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Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Applied physics letters, 2000-08, Vol.77 (8), p.1176-1178

2000

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Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1987-07, Vol.56 (1), p.137-148

1987

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Interactions of dislocations and antiphase (inversion) domain boundaries in III-V/IV heteroepitaxy

Journal of electronic materials, 1994-10, Vol.23 (10), p.1021-1026

KVAM, E. P

1994

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Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells

Journal of crystal growth, 2000, Vol.208 (1), p.79-84

2000

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Deformation induced defects in ReBa2Cu3O7-δ

Physica. C, Superconductivity, 1990-03, Vol.166 (1-2), p.115-124

1990

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Study on the possible structural transition in Nd2−xCexCuO4−δ

Physica. C, Superconductivity, 1997-12, Vol.292 (3-4), p.203-210

1997

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Single variant orientational growth of YBa2Cu3O7−x on vicinal (011) SrTiO3 substrates observed by electron microscopy

Physica. C, Superconductivity, 1997-10, Vol.289 (3-4), p.243-250

1997

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Surface orientation and stacking fault generation in strained epitaxial growth

Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs

Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions

Dislocation nucleation near the critical thickness in GeSi/Si strained layers

Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity

Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

Reduced dislocation density in Ge/Si epilayers

Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

Dislocation-induced flux pinning interactions in YBa2Cu3O7

Microstructural examination of extended crystal defects in silicon selective epitaxial growth

Possible dislocation multiplication source in (001) semiconductor epitaxy

The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires

Effects of platinum and oxygenation on microstructure in YBa2Cu3O7-δ/Y2BaCuO5 bulk materials

New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers

Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold

Interactions of dislocations and antiphase (inversion) domain boundaries in III-V/IV heteroepitaxy

Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells

Deformation induced defects in ReBa2Cu3O7-δ

Study on the possible structural transition in Nd2−xCexCuO4−δ

Single variant orientational growth of YBa2Cu3O7−x on vicinal (011) SrTiO3 substrates observed by electron microscopy

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