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Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

Materials Science Forum, 2016-05, Vol.858, p.312-317

2016

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Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-02, Vol.157 (1), p.6-10

2009

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High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2021-01, Vol.487, p.1-7

2021

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Single crystalline SiGe layers on Si by solid phase epitaxy

Journal of crystal growth, 2015-04, Vol.416, p.34-40

2015

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Imaging Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope

Physical review applied, 2022-07, Vol.18 (1), Article 014041

2022

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Low-Temperature Properties of Whispering-Gallery Modes in Isotopically Pure Silicon-28

Physical review applied, 2019-04, Vol.11 (4), Article 044044

2019

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Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species

Semiconductor science and technology, 2016-08, Vol.31 (8), p.84004

2016

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Valley population of donor states in highly strained silicon

Materials for quantum technology, 2022-06, Vol.2 (2), p.25002

2022

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Giant, Anomalous Piezoimpedance in Silicon-on-insulator

Physical review applied, 2019-04, Vol.11 (4), Article 044010

2019

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Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-11, Vol.269 (22), p.2657-2661

2011

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Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Thin solid films, 2010-02, Vol.518 (9), p.2524-2527

2010

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Hydrogen in amorphous Si and Ge during solid phase epitaxy

Thin solid films, 2010-02, Vol.518 (9), p.2317-2322

2010

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Best Practice Guidelines for Pre-Launch Characterization and Calibration of Instruments for Passive Optical Remote Sensing

Journal of research of the National Institute of Standards and Technology, 2011-03, Vol.116 (2), p.621-646

2011

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The Kelvin and Temperature Measurements

Journal of research of the National Institute of Standards and Technology, 2001-01, Vol.106 (1), p.105-149

2001

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Spectrally Tunable Sources for Advanced Radiometric Applications

Journal of research of the National Institute of Standards and Technology, 2006-09, Vol.111 (5), p.401-410

2006

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Sources of Differences in On-Orbital Total Solar Irradiance Measurements and Description of a Proposed Laboratory Intercomparison

Journal of research of the National Institute of Standards and Technology, 2008-07, Vol.113 (4), p.187-203

2008

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Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers

Electronics letters, 1991, Vol.27 (3), p.257-259

1991

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A monolithic long wavelength photoreceiver using heterojunction bipolar transistors

IEEE journal of quantum electronics, 1991-03, Vol.27 (3), p.773-777

1991

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Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.602-605

2002

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Ion channelling and Raman scattering study of self-implanted silicon

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2002, p.429-432

2002

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Radiometric Measurement Comparison Using the Ocean Color Temperature Scanner (OCTS) Visible and Near Infrared Integrating Sphere

Journal of research of the National Institute of Standards and Technology, 1997-11, Vol.102 (6), p.627-646

1997

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Observation of gain compression in a GaAlAs diode laser through a picosecond transmission measurement

Applied physics letters, 1986-11, Vol.49 (18), p.1135-1137

1986

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Characterization and growth of SiC epilayers on Si substrates

Superlattices and microstructures, 1986, Vol.2 (3), p.223-231

1986

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High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

IEEE journal of quantum electronics, 1988-03, Vol.24 (3), p.496-500

1988

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Intercomparison of the ITS-90 radiance temperature scales of the National Physical Laboratory (U.K.) and the National Institute of Standards and Technology

Journal of research of the National Institute of Standards and Technology, 1994-11, Vol.99 (6), p.731-736, Article 731

1994

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Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy

High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector

Single crystalline SiGe layers on Si by solid phase epitaxy

Imaging Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope

Low-Temperature Properties of Whispering-Gallery Modes in Isotopically Pure Silicon-28

Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species

Valley population of donor states in highly strained silicon

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Hydrogen in amorphous Si and Ge during solid phase epitaxy

Best Practice Guidelines for Pre-Launch Characterization and Calibration of Instruments for Passive Optical Remote Sensing

The Kelvin and Temperature Measurements

Spectrally Tunable Sources for Advanced Radiometric Applications

Sources of Differences in On-Orbital Total Solar Irradiance Measurements and Description of a Proposed Laboratory Intercomparison

Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers

A monolithic long wavelength photoreceiver using heterojunction bipolar transistors

Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

Ion channelling and Raman scattering study of self-implanted silicon

Radiometric Measurement Comparison Using the Ocean Color Temperature Scanner (OCTS) Visible and Near Infrared Integrating Sphere

Observation of gain compression in a GaAlAs diode laser through a picosecond transmission measurement

Characterization and growth of SiC epilayers on Si substrates

High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

Intercomparison of the ITS-90 radiance temperature scales of the National Physical Laboratory (U.K.) and the National Institute of Standards and Technology

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