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Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics

Applied physics letters, 2005-08, Vol.87 (9), p.093506-093506-3

2005

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9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser

IEEE photonics technology letters, 2006-10, Vol.18 (20), p.2117-2119

2006

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Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Applied physics letters, 1998-09, Vol.73 (12), p.1634-1636

1998

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Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

Applied physics letters, 1999-12, Vol.75 (26), p.4109-4111

1999

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Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

Journal of crystal growth, 2003-05, Vol.252 (1-3), p.51-57

2003

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Investigation of dominant effect on efficiency droop in InGaN light emitting device

Applied physics letters, 2010-07, Vol.97 (3), p.031113-031113-3

2010

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Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

Applied physics letters, 1998-11, Vol.73 (20), p.2953-2955

1998

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MOVPE grown 1360-nm GaInNAs quantum-well laser with multibarrier structures

IEEE photonics technology letters, 2004-09, Vol.16 (9), p.1994-1996

2004

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Visible-Color-Tunable Light-Emitting Diodes

Advanced materials (Weinheim), 2011-08, Vol.23 (29), p.3284-3288

2011

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Ohmic contact formation mechanism of nonalloyed Pd contacts to p -type GaN observed by positron annihilation spectroscopy

Applied physics letters, 1999-04, Vol.74 (16), p.2289-2291

1999

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Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

Solid-state electronics, 1999-02, Vol.43 (2), p.435-438

1999

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Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

Applied physics letters, 2010-03, Vol.96 (9), p.091104-091104-3

2010

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MOVPE growth optimization for optically efficient GaInNAs quantum well structure

Journal of crystal growth, 2005-01, Vol.273 (3), p.368-374

2005

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Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterostructures

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2686-2690

2004

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Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

Journal of electronic materials, 2001-03, Vol.30 (3), p.129-133

2001

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Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain

Journal of crystal growth, 2004-12, Vol.272 (1), p.748-752

2004

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Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

Applied physics letters, 2009-12, Vol.95 (24)

2009

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7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser

Applied physics letters, 2006-12, Vol.89 (24), p.241107-241107-3

2006

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Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Journal of applied physics, 2001-01, Vol.89 (1), p.634-637

2001

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The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1)

Journal of crystal growth, 2002-06, Vol.241 (3), p.297-303

2002

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Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.449-453

2006

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Structure optimization of InGaN–GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

Journal of crystal growth, 2004-12, Vol.272 (1), p.264-269

2004

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The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Journal of crystal growth, 2001-06, Vol.226 (2-3), p.215-222

2001

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Efficient Alternating Current Operated White Light-Emitting Diode Chip

IEEE photonics technology letters, 2009-01, Vol.21 (1), p.33-35

2009

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Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

Journal of electronic materials, 2001-02, Vol.30 (2), p.L8-L12

2001

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Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics

9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

Investigation of dominant effect on efficiency droop in InGaN light emitting device

Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

MOVPE grown 1360-nm GaInNAs quantum-well laser with multibarrier structures

Visible-Color-Tunable Light-Emitting Diodes

Ohmic contact formation mechanism of nonalloyed Pd contacts to p -type GaN observed by positron annihilation spectroscopy

Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

MOVPE growth optimization for optically efficient GaInNAs quantum well structure

Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterostructures

Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser

Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1)

Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

Structure optimization of InGaN–GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Efficient Alternating Current Operated White Light-Emitting Diode Chip

Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

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