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Simulating gas-liquid multiphase flow using meshless Lagrangian method

International journal for numerical methods in fluids, 2014-12, Vol.76 (11), p.938-959

2014

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Research on the SBS mediums used in high peak power laser system and their selection principle

Laser and particle beams, 2012-12, Vol.30 (4), p.525-530

2012

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Investigation of optical limiting characteristic based on the combination of stimulated Brillouin scattering and metal-phthalocyanine complex

Laser and particle beams, 2012-03, Vol.30 (1), p.17-21

2012

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Development of a generalized multi-layer model for 3-D simulation of free surface flows

International journal for numerical methods in fluids, 2004-12, Vol.46 (10), p.1049-1067

2004

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Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Applied physics letters, 2007-07, Vol.91 (2)

2007

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Observation of phase shifts in a vertical cavity quantum dot switch

Applied physics letters, 2011-06, Vol.98 (23), p.231101-231101-3

2011

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Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

Applied physics letters, 2009-07, Vol.95 (2)

2009

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Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes

Applied physics letters, 2007-08, Vol.91 (8), p.081112-081112-3

2007

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1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.922-923

2006

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Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

IEEE photonics technology letters, 2008-06, Vol.20 (11), p.942-944

2008

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Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.670-672

2007

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1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

Applied physics letters, 2008-03, Vol.92 (11), p.111906-111906-3

2008

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All-optical switch using InAs quantum dots in a vertical cavity

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

Applied physics letters, 2010-04, Vol.96 (15), p.151104-151104-3

2010

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p -doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Applied physics letters, 2006-08, Vol.89 (7)

2006

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Optimization of micro heat exchanger: CFD, analytical approach and multi-objective evolutionary algorithms

International journal of heat and mass transfer, 2006-03, Vol.49 (5), p.1090-1099

2006

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Flow Near Sloped Bank in Curved Channel

Journal of hydraulic engineering (New York, N.Y.), 1990-01, Vol.116 (1), p.55-70

1990

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Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer

Journal of applied physics, 2001-09, Vol.90 (6), p.2699-2702

2001

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Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots

Applied physics letters, 2011-05, Vol.98 (20), p.201904-201904-3

2011

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Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels

Applied physics letters, 2008-10, Vol.93 (16)

2008

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Interfacial reactions for the non-stoichiometric TiBx/(100)Si system

Journal of materials science, 2002-02, Vol.37 (3), p.515-521

2002

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Effects of growth temperature on the structural and optical properties of 1.6μm GaInNAs∕GaAs multiple quantum wells

Applied physics letters, 2006-05, Vol.88 (19)

2006

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ZnS/Ag/ZnS nano-multilayer films for transparent electrodes in flat display application

Applied surface science, 2001-11, Vol.183 (1), p.103-110

2001

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1.34 μm GalnNAs quantum well lasers with low room-temperature threshold current density

Electronics letters, 2006, Vol.42 (16), p.923-924

2006

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Simulating gas-liquid multiphase flow using meshless Lagrangian method

Research on the SBS mediums used in high peak power laser system and their selection principle

Investigation of optical limiting characteristic based on the combination of stimulated Brillouin scattering and metal-phthalocyanine complex

Development of a generalized multi-layer model for 3-D simulation of free surface flows

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Observation of phase shifts in a vertical cavity quantum dot switch

Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes

1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

All-optical switch using InAs quantum dots in a vertical cavity

Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

p -doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Optimization of micro heat exchanger: CFD, analytical approach and multi-objective evolutionary algorithms

Flow Near Sloped Bank in Curved Channel

Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy

Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer

Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots

Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels

Interfacial reactions for the non-stoichiometric TiBx/(100)Si system

Effects of growth temperature on the structural and optical properties of 1.6μm GaInNAs∕GaAs multiple quantum wells

ZnS/Ag/ZnS nano-multilayer films for transparent electrodes in flat display application

1.34 μm GalnNAs quantum well lasers with low room-temperature threshold current density

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