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Investigation on the self-assembly of the NFL-TBS.40-63 peptide and its interaction with gold nanoparticles as a delivery agent for glioblastoma

International journal of pharmaceutics: X, 2022-12, Vol.4, p.100128-100128, Article 100128

2022

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Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation

Journal of applied physics, 2002-10, Vol.92 (8), p.4449-4458

2002

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Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

Journal of applied physics, 2002-02, Vol.91 (4), p.2123-2132

2002

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Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

Journal of applied physics, 1999-06, Vol.85 (11), p.7768-7773

1999

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A 25 micron search for Vega-like disks around main-sequence stars with ISO

Astronomy and astrophysics (Berlin), 2002-05, Vol.387 (1), p.285-293

2002

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Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

Journal of applied physics, 1998-11, Vol.84 (9), p.5070-5079

1998

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Infrared spectral classification of normal stars

Astronomy and astrophysics (Berlin), 2002-11, Vol.394 (2), p.539-552

2002

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On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide

Journal of non-crystalline solids, 1999-04, Vol.245 (1), p.67-72

1999

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Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Journal of physics. D, Applied physics, 1999-07, Vol.32 (13), p.1435-1442

1999

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Low voltage and temperature effects on SILC in stressed ultrathin oxide films

Solid-state electronics, 2001-08, Vol.45 (8), p.1371-1381

2001

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Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors

Solid-state electronics, 2000-04, Vol.44 (4), p.623-630

2000

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On stress induced leakage current in 5 and 3 nm thick oxides

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.711-714

2000

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On positive charge annihilation and stress-induced leakage current decrease

Microelectronics and reliability, 1999, Vol.39 (2), p.191-196

1999

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On the positive charge and interface states in metal-oxide-semiconductor capacitors

Journal of applied physics, 1996-07, Vol.80 (1), p.271-277

1996

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High sensitivity image intensifier tube device for hard‐x‐ray detection

Review of scientific instruments, 1996-10, Vol.67 (10), p.3472-3477

1996

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Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current

Microelectronics and reliability, 1998-02, Vol.38 (2), p.221-225

1998

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Stress field polarity effect on defects generation in thin silicon dioxide films

Thin solid films, 1997, Vol.296 (1), p.106-109

1997

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A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Microelectronic engineering, 1997-06, Vol.36 (1), p.141-144

1997

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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

Microelectronics and reliability, 1999-02, Vol.39 (2), p.165-169

1999

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Relaxation of interface states and positive charge in thin gate oxide after Fowler-Nordheim stress

Journal of applied physics, 1993-04, Vol.73 (7), p.3569-3570

1993

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On the relaxation of field induced oxide charge in metal-oxide-semiconductor capacitors

Solid-state electronics, 1994-08, Vol.37 (8), p.1553-1556

1994

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Influence of oxide charge on minority-carrier lifetime in metal-oxide-semiconductor capacitors

Applied physics letters, 1992-05, Vol.60 (18), p.2222-2224

1992

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Capture cross section of Si-SiO2 interface states generated during electron injection

Applied physics letters, 1989-07, Vol.55 (2), p.153-155

1989

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Conduction in Al/SiO/Au Structures

Thin solid films, 1973-09, Vol.17 (3), p.329-333

1973

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Low frequency dispersion in evaporated silicon oxide films

Thin solid films, 1980-01, Vol.71 (2), p.189-199

1980

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Investigation on the self-assembly of the NFL-TBS.40-63 peptide and its interaction with gold nanoparticles as a delivery agent for glioblastoma

Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation

Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

A 25 micron search for Vega-like disks around main-sequence stars with ISO

Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

Infrared spectral classification of normal stars

On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide

Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Low voltage and temperature effects on SILC in stressed ultrathin oxide films

Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors

On stress induced leakage current in 5 and 3 nm thick oxides

On positive charge annihilation and stress-induced leakage current decrease

On the positive charge and interface states in metal-oxide-semiconductor capacitors

High sensitivity image intensifier tube device for hard‐x‐ray detection

Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current

Stress field polarity effect on defects generation in thin silicon dioxide films

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

Relaxation of interface states and positive charge in thin gate oxide after Fowler-Nordheim stress

On the relaxation of field induced oxide charge in metal-oxide-semiconductor capacitors

Influence of oxide charge on minority-carrier lifetime in metal-oxide-semiconductor capacitors

Capture cross section of Si-SiO2 interface states generated during electron injection

Conduction in Al/SiO/Au Structures

Low frequency dispersion in evaporated silicon oxide films

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