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Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide

Applied physics letters, 2012-02, Vol.100 (8), p.082112-082112-4

2012

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Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3409-3413

2007

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Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage

Journal of the Korean Physical Society, 2013, 62(9), , pp.1312-1316

2013

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Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Japanese Journal of Applied Physics, 2017-12, Vol.56 (12), p.120305

2017

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Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH

Journal of the Korean Physical Society, 2016, 69(11), , pp.1677-1682

2016

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(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate

ECS transactions, 2018-04, Vol.85 (7), p.75-87

2018

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Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature

Applied surface science, 2013-11, Vol.285, p.795-804

2013

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Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Thin solid films, 2014-11, Vol.570, p.138-149

2014

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Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

Journal of the Korean Physical Society, 2016, 68(6), , pp.810-814

2016

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Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Applied physics letters, 2010-03, Vol.96 (12)

2010

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Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Materials science in semiconductor processing, 2011-03, Vol.14 (1), p.13-17

2011

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Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer

Applied physics letters, 2006-10, Vol.89 (15)

2006

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Fabrication and characterization of 4H-SiC planar MESFETs

Microelectronic engineering, 2006, Vol.83 (1), p.160-164

2006

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High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates

Physica scripta, 2019-10, Vol.94 (10), p.105809

2019

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Effects of heat treatment in vacuum on the physical properties of thermal nitrided silicon dioxide gate on 4H-silicon carbide

Thin solid films, 2008-09, Vol.516 (21), p.7921-7924

2008

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Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates

Journal of crystal growth, 2007-07, Vol.305 (1), p.83-87

2007

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Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide

Microelectronic engineering, 2020-03, Vol.225, p.111280, Article 111280

2020

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High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S1), p.6

2018

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TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Current Applied Physics, 2020, 20(12), , pp.1386-1390

2020

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Crystal splitting and enhanced photocatalytic behavior of TiO2 rutile nano-belts induced by dislocations

Nanoscale, 2013-01, Vol.5 (2), p.753-758

2013

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Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

Physica scripta, 2019-10, Vol.94 (12)

2019

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Oxygen- and photoresist-related interface states of 4H-SiC Schottky diode observed by deep-level transient spectroscopy

Journal of applied physics, 2017-09, Vol.122 (9)

2017

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The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode

ECS transactions, 2018, Vol.85 (7), p.59-65

2018

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Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide

Applied physics letters, 2007-04, Vol.90 (16)

2007

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Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide

Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC

Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage

Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH

(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate

Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature

Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer

Fabrication and characterization of 4H-SiC planar MESFETs

High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates

Effects of heat treatment in vacuum on the physical properties of thermal nitrided silicon dioxide gate on 4H-silicon carbide

Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates

Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Crystal splitting and enhanced photocatalytic behavior of TiO2 rutile nano-belts induced by dislocations

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

Oxygen- and photoresist-related interface states of 4H-SiC Schottky diode observed by deep-level transient spectroscopy

The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode

Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide

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