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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2014-01, Vol.104 (3)

2014

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A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

IEEE photonics technology letters, 2007-02, Vol.19 (4), p.197-199

2007

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Development of capacitance measurement system for human serum albumin detection

Electronics letters, 2010-05, Vol.46 (10), p.678-680

2010

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Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

Solid-state electronics, 2005-03, Vol.49 (3), p.295-300

2005

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Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Physica status solidi. A, Applied research, 2004-07, Vol.201 (9), p.2190-2193

2004

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Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Journal of electronic materials, 2003-09, Vol.32 (9), p.948-951

2003

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Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

Solid-state electronics, 2000-04, Vol.44 (4), p.587-592

2000

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Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.305-308

2009

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GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation

Japanese Journal of Applied Physics, 2001-10, Vol.40 (10B), p.L1084-L1085

2001

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AlGaAs/GaAs HBTs with extrinsic base regrowth

Journal of crystal growth, 1998-06, Vol.188 (1), p.355-358

1998

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AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure

ECS transactions, 2018, Vol.85 (7), p.49-52

2018

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AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer

ECS transactions, 2018, Vol.85 (7), p.53-57

2018

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A pseudomorphic GaInP/InP MESFET with improved device performance

IEEE transactions on electron devices, 1993-12, Vol.40 (12), p.2361-2362

1993

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Device characteristics of InAISb/InAs and InAISb/InAsSb HFETs

Electronics letters, 2013, Vol.49 (16), p.1026-1028

2013

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A novel double heterojunction bipolar with composite collector

Solid-state electronics, 2002, Vol.46 (1), p.139-143

2002

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Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

Journal of crystal growth, 1995, Vol.150 (1-4), p.562-567

1995

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In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

Applied physics letters, 1997-05, Vol.70 (19), p.2589-2591

1997

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Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics, 2001, Vol.40 (12R), p.6720-6722

2001

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Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.443-446

1997

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Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1995-03, Vol.13 (2), p.664-666

1995

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Effect of Cl 2 ∕ Ar dry etching on p -GaN with Ni ∕ Au metallization characterization

Applied physics letters, 2005-12, Vol.87 (25), p.252107-252107-3

2005

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Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

MRS proceedings, 1993, Vol.300

1993

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Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer

Journal of applied physics, 2006-01, Vol.99 (2)

2006

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Surface oxygen implantation for GaAs MESFETs passivation

Semiconductor science and technology, 2004-12, Vol.19 (12), p.L118-L120

2004

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Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Applied physics letters, 2000-09, Vol.77 (10), p.1538-1539

2000

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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

Development of capacitance measurement system for human serum albumin detection

Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation

AlGaAs/GaAs HBTs with extrinsic base regrowth

AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure

AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer

A pseudomorphic GaInP/InP MESFET with improved device performance

Device characteristics of InAISb/InAs and InAISb/InAsSb HFETs

A novel double heterojunction bipolar with composite collector

Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors

Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

Effect of Cl 2 ∕ Ar dry etching on p -GaN with Ni ∕ Au metallization characterization

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer

Surface oxygen implantation for GaAs MESFETs passivation

Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

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