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Effects of a high-temperature hydrogen anneal on the memory retention of metal-nitride-oxide-silicon transistors at elevated temperatures

Journal of applied physics, 1981-01, Vol.52 (6), p.4348-4350

1981

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

Materials science & engineering. R, Reports : a review journal, 2006-04, Vol.51 (4), p.37-85

2006

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MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

Journal of applied physics, 2018-04, Vol.123 (13)

2018

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Investigation of Microwave Loss Induced by Oxide Regrowth in High- Q Niobium Resonators

Physical review applied, 2021-07, Vol.16 (1), Article 014018

2021

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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied physics letters, 2011-07, Vol.99 (4)

2011

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2627-2633

2006

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A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Applied physics letters, 2009-03, Vol.94 (10), p.102115-102115-3

2009

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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.256-260

2006

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The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of non-crystalline solids, 2005-07, Vol.351 (21-23), p.1902-1905

2005

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Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

Solid state phenomena, 2016-09, Vol.255, p.285-290

2016

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Nanoscale domain wall devices with magnetic tunnel junction read and write

Nature electronics, 2021-06, Vol.4 (6), p.392-398

2021

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Atomic layer deposition of hafnium oxide on germanium substrates

Journal of applied physics, 2005-03, Vol.97 (6), p.064104-064104-10

2005

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Electrical characterization of CNT contacts with Cu Damascene top contact

Microelectronic engineering, 2013-06, Vol.106, p.106-111

2013

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Electron accumulation in graphene by interaction with optically excited quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2011-03, Vol.43 (5), p.1046-1049

2011

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Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

Applied physics letters, 2003-07, Vol.83 (3), p.533-535

2003

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Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12001

2019

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A Study of Relaxation Current in High- $kappa$ Dielectric Stacks

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.402-408

2004

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Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Solid state phenomena, 2016, Vol.255, p.129-135

2016

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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

Microelectronic engineering, 2009-07, Vol.86 (7), p.1592-1595

2009

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Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon

Physica status solidi. C, 2017-12, Vol.14 (12), p.n/a

2017

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Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance

Solid state phenomena, 2016-01, Vol.255, p.195-200

2016

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Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Journal of applied physics, 2004-11, Vol.96 (9), p.4878-4889

2004

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Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Applied physics letters, 2002-07, Vol.81 (4), p.709-711

2002

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Effects of a high-temperature hydrogen anneal on the memory retention of metal-nitride-oxide-silicon transistors at elevated temperatures

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

Investigation of Microwave Loss Induced by Oxide Regrowth in High- Q Niobium Resonators

Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

Nanoscale domain wall devices with magnetic tunnel junction read and write

Atomic layer deposition of hafnium oxide on germanium substrates

Electrical characterization of CNT contacts with Cu Damascene top contact

Electron accumulation in graphene by interaction with optically excited quantum dots

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

A Study of Relaxation Current in High- $kappa$ Dielectric Stacks

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon

Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

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