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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Journal of crystal growth, 2010, Vol.312 (2), p.258-262

2010

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Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Physica status solidi. PSS-RRL. Rapid research letters, 2015-10, Vol.9 (10), p.575-579

2015

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Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Journal of the Korean Physical Society, 2016, 69(1), , pp.85-90

2016

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Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

Applied surface science, 2016-12, Vol.389, p.645-650

2016

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In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

Surface & coatings technology, 2007-04, Vol.201 (14), p.6261-6266

2007

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Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer

Journal of applied physics, 2007-09, Vol.102 (5)

2007

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Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1383-1385

2010

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Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

Journal of the Korean Physical Society, 2017, 70(11), , pp.1001-1006

2017

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Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots

Journal of the Korean Physical Society, 2013, 62(9), , pp.1274-1279

2013

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Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DH02-04DH02-6

2010

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Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet

Journal of nanoscience and nanotechnology, 2007-11, Vol.7 (11), p.4053-4056

2007

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Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Journal of crystal growth, 2002-06, Vol.241 (3), p.289-296

2002

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Evaluation of mechanical properties under a temperature gradient field

Measurement science & technology, 2001-11, Vol.12 (11), p.1881-1885

2001

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Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

Journal of crystal growth, 2003-08, Vol.256 (1-2), p.56-62

2003

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The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

Journal of crystal growth, 2001, Vol.222 (3), p.459-464

2001

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The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Journal of crystal growth, 2001-06, Vol.226 (2-3), p.215-222

2001

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Structural and optical properties of ZnO∕Mg0.1Zn0.9O multiple quantum wells grown on ZnO substrates

Applied physics letters, 2007-05, Vol.90 (21)

2007

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Comparative study of electroabsorption in InGaN∕GaN quantum zigzag heterostructures with polarization-induced electric fields

Applied physics letters, 2008-05, Vol.92 (20)

2008

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Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Influences of an Electron Reservoir Layer on the Optical and the Electrical Properties of InGaN/GaN MQW LEDs

Journal of the Korean Physical Society, 2009, 54(4), , pp.1666-1670

2009

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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer

Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots

Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet

Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Evaluation of mechanical properties under a temperature gradient field

Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Structural and optical properties of ZnO∕Mg0.1Zn0.9O multiple quantum wells grown on ZnO substrates

Comparative study of electroabsorption in InGaN∕GaN quantum zigzag heterostructures with polarization-induced electric fields

Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Influences of an Electron Reservoir Layer on the Optical and the Electrical Properties of InGaN/GaN MQW LEDs

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