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X-ray photoelectron spectroscopy (XPS) and gamma-ray shielding investigation of boro-silicate glasses contained alkali/alkaline modifier

Results in physics, 2019-09, Vol.14, p.102438, Article 102438

2019

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Stress evolution of Ge nanocrystals in dielectric matrices

Nanotechnology, 2018-05, Vol.29 (18), p.185704

2018

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Transfer-free, scalable vertical heterostructure FET on MoS2/WS2 continuous films

Nanotechnology, 2022-11, Vol.33 (47)

2022

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Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Applied surface science, 2018-03, Vol.435, p.880-885

2018

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Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-03, Vol.268 (6), p.616-621

2010

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Sputtered 2D transition metal dichalcogenides: from growth to device applications

TURKISH JOURNAL OF PHYSICS, 2021-01, Vol.45 (3), p.131-147

2021

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Gamma and neutron irradiation effects on multi-walled carbon nanotubes

Diamond and related materials, 2018-08, Vol.87, p.242-247

2018

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Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Journal of electronic materials, 2023-09, Vol.52 (9), p.6042-6051

2023

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High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes

Journal of physics. D, Applied physics, 2008-05, Vol.41 (10), p.105301-105301 (5)

2008

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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Materials science in semiconductor processing, 2021-06, Vol.127, p.105733, Article 105733

2021

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Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-05, Vol.266 (9), p.2021-2026

2008

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Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Radiation effects and defects in solids, 2017-08, Vol.172 (7-8), p.650-663

2017

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The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Journal of physics. D, Applied physics, 2018-01, Vol.51 (3), p.35105

2018

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Molecular beam epitaxy of N-polar InGaN

Applied physics letters, 2010-08, Vol.97 (7), p.071903-071903-3

2010

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AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

Semiconductor science and technology, 2019-06, Vol.34 (7)

2019

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Temperature dependent capacitance and DLTS studies of Ni/ n-type 6H-SiC Schottky diode

Current Applied Physics, 2009, 9(6), , pp.1181-1185

2009

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Ultra-conductive wires with cascaded carbon nanotube/Cu structure

Diamond and related materials, 2021-12, Vol.120, p.108711, Article 108711

2021

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Formation of carbon nanowalls by pulsed filtered cathodic vacuum arc deposition

Diamond and related materials, 2019-03, Vol.93, p.200-207

2019

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N-Polar III--Nitride Green (540 nm) Light Emitting Diode

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5), p.052101-052101-3

2011

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Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Semiconductor science and technology, 2016-08, Vol.31 (8), p.85013

2016

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Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

European physical journal. Applied physics, 2020-05, Vol.90 (2), p.20301

2020

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Magnetron sputtered WS2; optical and structural analysis

Journal of physics. Conference series, 2016, Vol.707 (1)

2016

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Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Applied physics letters, 2011-08, Vol.99 (9), p.092109-092109-3

2011

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X-ray photoelectron spectroscopy (XPS) and gamma-ray shielding investigation of boro-silicate glasses contained alkali/alkaline modifier

Stress evolution of Ge nanocrystals in dielectric matrices

Transfer-free, scalable vertical heterostructure FET on MoS2/WS2 continuous films

Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Gamma and neutron irradiation effects on multi-walled carbon nanotubes

Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing

Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation

The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Molecular beam epitaxy of N-polar InGaN

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

Temperature dependent capacitance and DLTS studies of Ni/ n-type 6H-SiC Schottky diode

Ultra-conductive wires with cascaded carbon nanotube/Cu structure

Formation of carbon nanowalls by pulsed filtered cathodic vacuum arc deposition

N-Polar III--Nitride Green (540 nm) Light Emitting Diode

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

Magnetron sputtered WS2; optical and structural analysis

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

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