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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Materials, 2023-01, Vol.16 (3), p.965

2023

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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Physica status solidi. PSS-RRL. Rapid research letters, 2016-04, Vol.10 (4), p.324-327

2016

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Thin solid films, 2013-07, Vol.540, p.96-105

2013

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Study of oxidation processes in Mo/Be multilayers

AIP advances, 2018-07, Vol.8 (7), p.075202-075202-12

2018

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Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.865-868

2021

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Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Physics of the solid state, 2021-11, Vol.63 (11), p.1593-1600

2021

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Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1056-1058

2020

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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1059-1063

2020

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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.956-960

2020

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Journal of crystal growth, 2014-06, Vol.396, p.66-70

2014

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All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

Applied physics letters, 2022-12, Vol.121 (23)

2022

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SiV center electroluminescence in high current density diamond p-i-n diode

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Applied physics letters, 2020-01, Vol.116 (1)

2020

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Microwave microscopy of diamond semiconductor structures

Journal of applied physics, 2017-04, Vol.121 (16)

2017

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Ultrathin metallic interlayers in vacuum deposited MoOx/metal/MoOx electrodes for organic solar cells

Applied surface science, 2016-12, Vol.390, p.703-709

2016

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Plasma Chemical Deposition of Hydrogenated DLC Films with Different Hydrogen and sp3-Hybrid Carbon Content

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (1), p.57-60

2024

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Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Journal of applied physics, 2020-04, Vol.127 (16)

2020

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin solid films, 2016-05, Vol.607, p.25-31

2016

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Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures

Technical physics, 2020-11, Vol.65 (11), p.1767-1770

2020

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The isotopic composition of enriched Si: a data analysis

Metrologia, 2011-04, Vol.48 (2), p.S32-S36

2011

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Influence of CVD diamond growth conditions on nitrogen incorporation

Diamond and related materials, 2017-02, Vol.72, p.1-6

2017

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Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

Diamond and related materials, 2017-04, Vol.74, p.59-64

2017

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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Technical physics letters, 2019, Vol.45 (1), p.48-52

2019

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Magnetic Skyrmions in Thickness-Modulated Films

JETP letters, 2018-03, Vol.107 (6), p.364-368

2018

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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

Technical physics letters, 2018-04, Vol.44 (4), p.297-300

2018

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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Novel microwave plasma-assisted CVD reactor for diamond delta doping

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Study of oxidation processes in Mo/Be multilayers

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

SiV center electroluminescence in high current density diamond p-i-n diode

Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Microwave microscopy of diamond semiconductor structures

Ultrathin metallic interlayers in vacuum deposited MoOx/metal/MoOx electrodes for organic solar cells

Plasma Chemical Deposition of Hydrogenated DLC Films with Different Hydrogen and sp3-Hybrid Carbon Content

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures

The isotopic composition of enriched Si: a data analysis

Influence of CVD diamond growth conditions on nitrogen incorporation

Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Magnetic Skyrmions in Thickness-Modulated Films

New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

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