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Maneuvering the growth of silver nanoplates: use of halide ions to promote vertical growth

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-08, Vol.2 (30), p.6165-6170

2014

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Eco-Friendly Synthesis of Water-Glass-Based Silica Aerogels via Catechol-Based Modifier

Nanomaterials (Basel, Switzerland), 2020-12, Vol.10 (12), p.2406

2020

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Modeling of binary droplet collisions for application to inter-impingement sprays

International journal of multiphase flow, 2009-06, Vol.35 (6), p.533-549

2009

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A Study on the Characteristics of Fishery Resources Distribution in Coastal Waters of Yeongil Bay Using Acoustic Survey

Applied sciences, 2021-07, Vol.11 (14), p.6627

2021

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Formation of graphene on SiC by chemical vapor deposition with liquid sources

Surface & coatings technology, 2013-09, Vol.231, p.189-192

2013

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Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications

Journal of applied physics, 2010-02, Vol.107 (3)

2010

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Improved electrical properties of SiC wafer with defects covered by free standing graphene

Diamond and related materials, 2014-03, Vol.43, p.55-59

2014

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Thermal Stress Analysis of Ge1Sb4Te7-Based Phase-Change Memory Devices

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.782-791

2011

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Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

Thin solid films, 2012-09, Vol.520 (23), p.6947-6953

2012

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Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Thin solid films, 2011-06, Vol.519 (16), p.5323-5328

2011

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Growth and mechanism of one-dimensional Al2O3 nanostructures grown by chemical vapor deposition from an Al powder source

Journal of crystal growth, 2012-12, Vol.361, p.189-194

2012

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Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Thin solid films, 2010-09, Vol.518 (22), p.6422-6428

2010

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Transition metal-chelating surfactant micelle templates for facile synthesis of mesoporous silica nanoparticles

Journal of solid state chemistry, 2012-01, Vol.185, p.89-94

2012

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Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

Materials science in semiconductor processing, 2010-02, Vol.13 (1), p.9-12

2010

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Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

Journal of electronic materials, 2011-05, Vol.40 (5), p.840-844

2011

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Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Ceramics international, 2008-05, Vol.34 (4), p.957-960

2008

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Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

Thin solid films, 2004-12, Vol.469-470 (Complete), p.322-326

2004

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Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Journal of the American Ceramic Society, 1999-02, Vol.82 (2), p.331-337

1999

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Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

Ceramics international, 2008-05, Vol.34 (4), p.953-956

2008

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Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 6A), p.3519-3522

2003

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Microwave dielectric properties of Bi2O3-doped Ca[(Li1/3Nb2/3)1-xTix]O3-δ ceramics

Journal of the European Ceramic Society, 2003, Vol.23 (14), p.2413-2416

2003

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Study on nitrogen doped Ge2Sb2Te5 films for phase change memory

Journal of materials science, 2005-03, Vol.40 (6), p.1543-1545

2005

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The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

Journal of electroceramics, 2006-12, Vol.17 (2-4), p.811-816

2006

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The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Journal of materials science, 2001-04, Vol.36 (7), p.1695-1700

2001

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Maneuvering the growth of silver nanoplates: use of halide ions to promote vertical growth

Eco-Friendly Synthesis of Water-Glass-Based Silica Aerogels via Catechol-Based Modifier

Modeling of binary droplet collisions for application to inter-impingement sprays

A Study on the Characteristics of Fishery Resources Distribution in Coastal Waters of Yeongil Bay Using Acoustic Survey

Formation of graphene on SiC by chemical vapor deposition with liquid sources

Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications

Improved electrical properties of SiC wafer with defects covered by free standing graphene

Thermal Stress Analysis of Ge1Sb4Te7-Based Phase-Change Memory Devices

Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Growth and mechanism of one-dimensional Al2O3 nanostructures grown by chemical vapor deposition from an Al powder source

Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Transition metal-chelating surfactant micelle templates for facile synthesis of mesoporous silica nanoparticles

Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory

Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric

Microwave dielectric properties of Bi2O3-doped Ca[(Li1/3Nb2/3)1-xTix]O3-δ ceramics

Study on nitrogen doped Ge2Sb2Te5 films for phase change memory

The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

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