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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Nature photonics, 2016-09, Vol.10 (9), p.595-599

2016

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Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Light, science & applications, 2018-06, Vol.7 (1), p.13-7, Article 13

2018

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GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation

IEEE photonics technology letters, 2017-12, Vol.29 (24), p.2203-2206

2017

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GaN-based green laser diodes

Journal of semiconductors, 2016-11, Vol.37 (11), p.111001

2016

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Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer

AIP advances, 2023-05, Vol.13 (5), p.055106-055106-6

2023

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Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth

Applied physics letters, 2017-09, Vol.111 (11)

2017

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Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

ACS photonics, 2018-03, Vol.5 (3), p.699-704

2018

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Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

Applied physics express, 2019-05, Vol.12 (5), p.55503

2019

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Investigation of InGaN/GaN laser degradation based on luminescence properties

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB07

2019

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Hole transport in c-plane InGaN-based green laser diodes

Applied physics letters, 2016-08, Vol.109 (9)

2016

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Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

Applied physics letters, 2014-10, Vol.105 (17)

2014

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Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Journal of semiconductors, 2020-10, Vol.41 (10), p.102104-32

2020

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Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB03

2019

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Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Journal of crystal growth, 2015-01, Vol.409, p.51-55

2015

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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2013-05, Vol.371, p.7-10

2013

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Polarization relaxation in InGaN/(In)GaN multiple quantum wells

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB12

2019

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Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region

Applied physics express, 2014-11, Vol.7 (11), p.111001

2014

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Optical characterization of InGaN/GaN quantum well active region of green laser diodes

Applied physics express, 2017-01, Vol.10 (1), p.12701

2017

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Properties of exchange interaction in Yb3Fe5O12 under extreme conditions

Journal of magnetism and magnetic materials, 2009-10, Vol.321 (19), p.3307-3310

2009

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Dispersible and manipulable magnetic L1-FePt nanoparticles

Nanoscale, 2020-04, Vol.12 (14), p.7843-7848

2020

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FePt/Co core/shell nanoparticle-based anisotropic nanocomposites and their exchange spring behavior

Nanoscale, 2018-02, Vol.10 (8), p.4061-4067

2018

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Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells

Journal of applied physics, 2020-01, Vol.127 (1)

2020

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Strain-Related Degradation of GaN-Based Blue Laser Diodes

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-5

2019

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation

GaN-based green laser diodes

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer

Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

Investigation of InGaN/GaN laser degradation based on luminescence properties

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Hole transport in c-plane InGaN-based green laser diodes

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells

Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Polarization relaxation in InGaN/(In)GaN multiple quantum wells

Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region

Optical characterization of InGaN/GaN quantum well active region of green laser diodes

Properties of exchange interaction in Yb3Fe5O12 under extreme conditions

Dispersible and manipulable magnetic L1-FePt nanoparticles

FePt/Co core/shell nanoparticle-based anisotropic nanocomposites and their exchange spring behavior

Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells

Strain-Related Degradation of GaN-Based Blue Laser Diodes

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