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Fluctuation magnetoconductivity in superconducting Ca10(Pt4As8)(Fe2As2)5 single crystal

Results in physics, 2022-11, Vol.42, p.105976, Article 105976

2022

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Thermally activated flux flow in superconducting epitaxial FeSe0.6Te0.4 thin film

Results in physics, 2017, Vol.7, p.16-20

2017

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Thickness and Refractive Index Measurements by Full-Field Optical Coherence Microscopy

IEEE sensors journal, 2009-12, Vol.9 (12), p.1996-1997

2009

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Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

IEEE photonics technology letters, 2005-07, Vol.17 (7), p.1378-1380

2005

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Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2191-2193

2005

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Highly integrated laser-modulator module for high-speed high dynamic range analog transmission

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2188-2190

2005

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Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.86-90

2005

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Power flow analysis for a floating sandwich raft isolation system using a higher-order theory

Journal of sound and vibration, 2009-01, Vol.319 (1), p.228-246

2009

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Tin whiskers studied by synchrotron radiation scanning X-ray micro-diffraction

Acta materialia, 2003-12, Vol.51 (20), p.6253-6261

2003

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Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.366-371

2005

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Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

Applied physics letters, 2006-03, Vol.88 (13)

2006

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A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes

Solid state communications, 2010-10, Vol.150 (39), p.1955-1958

2010

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Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs

Applied Science and Convergence Technology, 2015-11, Vol.24 (6), p.254-256

2015

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Investigation of detection wavelength of Quantum Well Infrared-Photodetector

Applied Science and Convergence Technology, 2015-11, Vol.24 (6), p.257-261

2015

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Quantum dot-like effect in InGaAs/GaAs quantum well

European physical journal. Applied physics, 2011-08, Vol.55 (2), p.20402

2011

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Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2010-03, Vol.42 (5), p.1536-1539

2010

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Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy

Journal of applied physics, 2004-10, Vol.96 (8), p.4122-4125

2004

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Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

Journal of crystal growth, 2005-03, Vol.275 (3-4), p.415-421

2005

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Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.115-118

2005

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Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Current Applied Physics, 2006, 6(6), , pp.1024-1029

2006

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Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes

Current Applied Physics, 2006, 6(1l), , pp.33-37

2006

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Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1-2), p.115-118

2006

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Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.524-527

2006

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Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer

Microelectronic engineering, 2005-03, Vol.78-79, p.229-232

2005

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Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.234-236

2006

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Fluctuation magnetoconductivity in superconducting Ca10(Pt4As8)(Fe2As2)5 single crystal

Thermally activated flux flow in superconducting epitaxial FeSe0.6Te0.4 thin film

Thickness and Refractive Index Measurements by Full-Field Optical Coherence Microscopy

Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

Highly integrated laser-modulator module for high-speed high dynamic range analog transmission

Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices

Power flow analysis for a floating sandwich raft isolation system using a higher-order theory

Tin whiskers studied by synchrotron radiation scanning X-ray micro-diffraction

Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy

Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes

Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs

Investigation of detection wavelength of Quantum Well Infrared-Photodetector

Quantum dot-like effect in InGaAs/GaAs quantum well

Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy

Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy

Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes

Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure

Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer

Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources

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