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Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

Journal of electronic materials, 2006-06, Vol.35 (6), p.1275-1282

2006

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Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Journal of electronic materials, 2003-07, Vol.32 (7), p.656-660

2003

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Photoconductivity in Materials Research

Springer Handbook of Electronic and Photonic Materials, p.1-1

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Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Journal of materials science. Materials in electronics, 2000-10, Vol.11 (7), p.565-568

2000

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Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Journal of electronic materials, 1999-06, Vol.28 (6), p.637-648

1999

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Growth of long wavelength infrared MCT emitters on conductive substrates

Journal of electronic materials, 2001-06, Vol.30 (6), p.723-728

2001

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Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-01, Vol.16 (1), p.29-39

1993

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Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe

Journal of materials science. Materials in electronics, 1999-04, Vol.10 (2), p.155

1999

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Determination of Shockley-Read trap parameters in n- and p-type epitaxial CdxHg1-xTe

Semiconductor science and technology, 1996-08, Vol.11 (8), p.1163-1167

1996

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Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1-xTe

Journal of electronic materials, 1995-11, Vol.24 (11), p.1759-1764

1995

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Type conversion of CdxHg1-xTe grown by liquid phase epitaxy

Semiconductor science and technology, 1993-01, Vol.8, p.S266

1993

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Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTe

Semiconductor science and technology, 1993-01, Vol.8, p.S81

1993

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Application of the accelerated crucible rotation technique to the Bridgman growth of CdxHg1− xTe: Simulations and crystal growth

Journal of crystal growth, 1984-01, Vol.70 (1-2), p.356-364

1984

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[(η6-C6H3Me3)Ru(D-pen)]2Cl2.4H2O

Acta crystallographica. Section C, Crystal structure communications, 1995-04, Vol.51 (4), p.578-580

1995

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Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1-xTe

Journal of crystal growth, 1994-04, Vol.138 (1-4), p.917-923

1994

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Effect of ACRT rotation parameters on Bridgman grown CdxHg1− xTe crystals

Journal of crystal growth, 1989-04, Vol.94 (4), p.959-966

1989

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Research trends in infrared detection in BAE SYSTEMS : Cadmium mercury telluride, InSb and pyroelectric arrays: Special issue on infrared detectors (3)

Sensors and materials, 2000, Vol.12 (7), p.421-434

2000

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Effect of process changes on the properties of CdxHg1-xTe crystals grown by Bridgman using ACRT

Journal of crystal growth, 1990-06, Vol.102 (4), p.848-856

1990

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Photon corrections to the graviton propagator

Physical review. D, Particles and fields, 1974-01, Vol.10 (2), p.461-467

1974

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Electron mobility in p-type epitaxially grown CdxHg1-xTe

Semiconductor science and technology, 1995-01, Vol.10 (1), p.56-60

1995

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Electron mobility in p-type epitaxially grown Hg1-xCdxTe

Semiconductor science and technology, 1993-01, Vol.8, p.S221

1993

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Interfaces and flow regimes in ACRT grown CdxHg1−xTe crystals

Journal of crystal growth, 1988-06, Vol.89 (2-3), p.171-176

1988

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Minority-carrier lifetime in doped and undoped n-type CdxHg1-xTe

Journal of applied physics, 1986-10, Vol.60 (7), p.2377-2385

1986

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Assessment of doped CdxHg1-xTe structures using bevelled sections

Semiconductor science and technology, 1993-01, Vol.8, p.S281

1993

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Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

Journal of crystal growth, 1990-04, Vol.101 (1), p.300-304

1990

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Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Photoconductivity in Materials Research

Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Growth of long wavelength infrared MCT emitters on conductive substrates

Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe

Determination of Shockley-Read trap parameters in n- and p-type epitaxial CdxHg1-xTe

Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1-xTe

Type conversion of CdxHg1-xTe grown by liquid phase epitaxy

Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTe

Application of the accelerated crucible rotation technique to the Bridgman growth of CdxHg1− xTe: Simulations and crystal growth

[(η6-C6H3Me3)Ru(D-pen)]2Cl2.4H2O

Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1-xTe

Effect of ACRT rotation parameters on Bridgman grown CdxHg1− xTe crystals

Research trends in infrared detection in BAE SYSTEMS : Cadmium mercury telluride, InSb and pyroelectric arrays: Special issue on infrared detectors (3)

Effect of process changes on the properties of CdxHg1-xTe crystals grown by Bridgman using ACRT

Photon corrections to the graviton propagator

Electron mobility in p-type epitaxially grown CdxHg1-xTe

Electron mobility in p-type epitaxially grown Hg1-xCdxTe

Interfaces and flow regimes in ACRT grown CdxHg1−xTe crystals

Minority-carrier lifetime in doped and undoped n-type CdxHg1-xTe

Assessment of doped CdxHg1-xTe structures using bevelled sections

Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

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