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Deep level defects in polycrystalline cadmium sulfide

Journal of applied physics, 1980-08, Vol.51 (8), p.4305-4309

1980

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Investigation of Melt Carry‐Over during Liquid Phase Epitaxy: I . Growth of Indium Phosphide

Journal of the Electrochemical Society, 1985-01, Vol.132 (1), p.172-176

1985

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High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers

Electronics letters, 1984, Vol.20 (10), p.393-394

1984

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Effect of photocarrier spreading on the photoluminescence of double heterostructure material

Journal of applied physics, 1984-01, Vol.56 (2), p.468-476

1984

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Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium-gallium-arsenide-phosphide double heterostructure lasers

Journal of applied physics, 1983-02, Vol.54 (2), p.535-539

1983

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Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment

IEEE transactions on electron devices, 1984-01, Vol.31 (6), p.841-843

1984

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Heat treatment effects on indium gallium arsenide phosphide double heterostructure material

Journal of applied physics, 1984-01, Vol.55 (4), p.1135-1138

1984

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Single-longitudinal-mode stabilized graded-index-rod external coupled-cavity laser

Applied physics letters, 1984-10, Vol.45 (7), p.729-731

1984

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Improved linearity and kink criteria for 1.3-μm InGaAsP-InP channeled substrate buried heterostructure lasers

Applied physics letters, 1984-01, Vol.44 (5), p.483-485

1984

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High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid-phase-epitaxy technique

Journal of applied physics, 1984-01, Vol.56 (10), p.2879-2882

1984

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High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE

Electronics letters, 1984, Vol.20 (10), p.417-419

1984

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Optical evaluation of indium gallium arsenide phosphide double-heterostructure material for injection lasers

Journal of applied physics, 1983-12, Vol.54 (12), p.7114-7118

1983

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2 Gbit/s operation of single-longitudinal-mode 1.5 μm double-channel planar buried-heterostructure C3 lasers

Electronics letters, 1984, Vol.20 (10), p.395-397

1984

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Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator

Electronics letters, 1984-01, Vol.20 (1), p.1-2

1984

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MFe center: a configurationally bistable defect in InP:Fe

Physical review. B, Condensed matter, 1984, Vol.30 (10), p.5817-5821

1984

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Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

AT&T Technical Journal, 1985-10, Vol.64 (8), p.1857-1884

1985

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Deep level defects in CdS/GaAs heterojunctions

Thin solid films, 1980-01, Vol.71 (1), p.33-39

1980

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11•2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers bu high-frequency direct modulation

Electronics letters, 1984, Vol.20 (6), p.238-240

1984

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Frequency chirp under current modulation in InGaAsP injection lasers

Journal of applied physics, 1984, Vol.56 (7), p.2167-2169

1984

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Optical properties of a 1.3-mu m InGaAsP superluminescent diode

IEEE transactions on electron devices, 1983-04, Vol.30 (4), p.360-363

1983

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Deep level defects in polycrystalline cadmium sulfide

Investigation of Melt Carry‐Over during Liquid Phase Epitaxy: I . Growth of Indium Phosphide

High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers

Effect of photocarrier spreading on the photoluminescence of double heterostructure material

Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium-gallium-arsenide-phosphide double heterostructure lasers

Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment

Heat treatment effects on indium gallium arsenide phosphide double heterostructure material

Single-longitudinal-mode stabilized graded-index-rod external coupled-cavity laser

Improved linearity and kink criteria for 1.3-μm InGaAsP-InP channeled substrate buried heterostructure lasers

High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid-phase-epitaxy technique

High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE

Optical evaluation of indium gallium arsenide phosphide double-heterostructure material for injection lasers

2 Gbit/s operation of single-longitudinal-mode 1.5 μm double-channel planar buried-heterostructure C3 lasers

Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator

MFe center: a configurationally bistable defect in InP:Fe

Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

Deep level defects in CdS/GaAs heterojunctions

11•2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers bu high-frequency direct modulation

Frequency chirp under current modulation in InGaAsP injection lasers

Optical properties of a 1.3-mu m InGaAsP superluminescent diode

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