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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

Semiconductors (Woodbury, N.Y.), 2021-04, Vol.55 (4), p.455-459

2021

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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.484-488

2020

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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.489-494

2020

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

Bulletin of the Lebedev Physics Institute, 2023-12, Vol.50 (Suppl 9), p.S976-S983

2023

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Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Semiconductor science and technology, 2021-11, Vol.36 (11), p.115005

2021

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Optical absorption in a waveguide based on an n-type AlGaAs heterostructure

Quantum electronics (Woodbury, N.Y.), 2021-11, Vol.51 (11), p.987-991

2021

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High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm

Quantum electronics (Woodbury, N.Y.), 2021-10, Vol.51 (10), p.909-911

2021

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

Quantum electronics (Woodbury, N.Y.), 2021-10, Vol.51 (10), p.905-908

2021

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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents

Technical physics letters, 2021-05, Vol.47 (5), p.368-371

2021

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Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1396-1402

2016

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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1225-1230

2016

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Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12148

2016

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Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

Quantum electronics (Woodbury, N.Y.), 2014-01, Vol.44 (10), p.907-911, Article 907

2014

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Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions

Quantum electronics (Woodbury, N.Y.), 2015-01, Vol.45 (10), p.879-883

2015

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High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

Quantum electronics (Woodbury, N.Y.), 2022-04, Vol.52 (4), p.340-342

2022

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Theoretical analysis of spatial current turn-on dynamics in high-power AlGaAs/GaAs laser-thyristors with an optical feedback

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.667-670

2016

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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

Semiconductors (Woodbury, N.Y.), 2014-03, Vol.48 (3), p.373-376

2014

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850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1075-1078

2013

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Semiconductor lasers with internal wavelength selection

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.122-126

2013

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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1211-1215

2012

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Closed mode structures in large rectangular closed resonators based on AlGaAs/GaAs heterostructures

2018 International Conference Laser Optics (ICLO), 2018, p.183-183

2018

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Numerical investigation of the aerodynamic and acoustical properties of a shrouded rotor

Fluid dynamics, 2016-05, Vol.51 (3), p.419-433

2016

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TREATMENT OF REFRACTORY OXIDES IN HF-PLASMA REACTORS

Le Journal de Physique Colloques, 1990-09, Vol.51 (C5), p.C5-C5-25

1990

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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Optical absorption in a waveguide based on an n-type AlGaAs heterostructure

High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm

InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions

High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

Theoretical analysis of spatial current turn-on dynamics in high-power AlGaAs/GaAs laser-thyristors with an optical feedback

Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Semiconductor lasers with internal wavelength selection

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

Closed mode structures in large rectangular closed resonators based on AlGaAs/GaAs heterostructures

Numerical investigation of the aerodynamic and acoustical properties of a shrouded rotor

TREATMENT OF REFRACTORY OXIDES IN HF-PLASMA REACTORS

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