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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

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IEEE_Xplore

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

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IEEE_Xplore

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

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IEEE_Xplore

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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IEEE_Xplore

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

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IEEE_Xplore

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.311-317

2021

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IEEE_Xplore

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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IEEE_Xplore

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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IEEE_Xplore

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4123-4129

2020

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IEEE_Xplore

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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IEEE_Xplore

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Nanoscale research letters, 2021-01, Vol.16 (1), p.8-7, Article 8

2021

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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IEEE_Xplore

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Chinese physics B, 2022-03, Vol.31 (4), p.47701-764

2022

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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

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Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum, 2013-01, Vol.87, p.150-154

2013

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Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Journal of crystal growth, 2023-06, Vol.611, p.127183, Article 127183

2023

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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.498-504

2014

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IEEE_Xplore

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP advances, 2017-09, Vol.7 (9), p.095305-095305-7

2017

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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Nanoscale research letters, 2014-10, Vol.9 (1), p.590-590, Article 590

2014

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Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-03, Vol.32 (2), p.2

2014

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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

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