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Pure spinor vertex operators in Siegel gauge and loop amplitude regularization

The journal of high energy physics, 2009-07, Vol.2009 (7), p.062-62

2009

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Enhancement of upconversion luminescence of Er doped Al2O3 films by Ag island films

Applied physics letters, 2008-03, Vol.92 (13)

2008

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Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8), p.85501-1-085501-4

2014

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Origin of pure spinor superstring

The journal of high energy physics, 2005-05, Vol.2005 (5), p.046-46

2005

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Operator Space of Pure Spinors

Progress of theoretical physics. Supplement, 2011-01, Vol.188, p.227-236

Aisaka, Yuri

2011

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Relating Green-Schwarz and extended pure spinor formalisms by similarity transformation

The journal of high energy physics, 2004-04, Vol.2004 (4), p.070-70

2004

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A new first class algebra, homological perturbation and extension of pure spinor formalism for superstring

The journal of high energy physics, 2003-02, Vol.2003 (2), p.017-17

2003

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Towards pure spinor type covariant description of supermembrane — an approach from the double spinor formalism

The journal of high energy physics, 2006-05, Vol.2006 (5), p.041-41

2006

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Operator mapping between RNS and extended pure spinor formalisms for superstring

The journal of high energy physics, 2003-08, Vol.2003 (8), p.047-47

2003

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Pure spinor partition function and the massive superstring spectrum

The journal of high energy physics, 2008-08, Vol.2008 (8), p.050-50

2008

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Dynamics of In atom during InAs/GaAs(0 0 1) growth process

Applied surface science, 2003-06, Vol.216 (1), p.478-482

2003

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First principles calculation of Indium migration barrier energy on an InAs(001) surface

Thin solid films, 2004-10, Vol.464 (Complete), p.35-37

2004

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On semiclassical analysis of pure spinor superstring in an AdS5 × S5 background

The journal of high energy physics, 2012-09, Vol.2012 (9)

2012

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Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations

Applied physics letters, 2003-11, Vol.83 (20), p.4187-4189

2003

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Arsenic source flow rate dependence of minority carrier lifetime in GaAsN grown by chemical beam epitaxy

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2078-2081

2013

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First-Principles Calculation of the Epitaxial Growth of GaN(0001)

Japanese Journal of Applied Physics, 2002-07, Vol.41 (Part 2, No. 7B), p.L842-L845

2002

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Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

Thin solid films, 2004-10, Vol.464 (Complete), p.38-41

2004

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The simulation study for the nanometer-scale selective growth of Si islands on Si(001) windows in ultrathin SiO2 films

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2-4), p.578-582

2004

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Theoretical investigation of migration of group V adatoms on GaAs(0 0 1) surface

Journal of crystal growth, 2002-04, Vol.237, p.121-124

2002

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First-Principles Calculation of the Dyanamics of Nitrogen on the SiC(0001) Surface during the Epitaxial Growth of GaN(0001)

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 7B), p.4636-4638

2003

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Role of As 2 molecules on Ga-terminated GaAs(0 0 1) surfaces during the MBE growth

Journal of crystal growth, 2002-03, Vol.236 (4), p.511-515

2002

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Role of As2 molecules on Ga-terminated GaAs(0 0 1) surfaces during the MBE growth

Journal of crystal growth, 2002-03, Vol.236 (4), p.511-515

2002

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Arsenic adatom migration on a GaAs(100) surface using a first-principles calculation

Surface science, 1999-09, Vol.438 (1), p.43-46

1999

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First-principle calculation of the epitaxial growth of GaN(0001)

Physica status solidi. C, 2003-01 (7), p.2490-2493

2003

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On the possibility of observation of electronic states of metallic atomic wire on Ni(001) surface with angle-resolved photoemission

Surface science, 1999-09, Vol.438 (1), p.31-36

1999

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Pure spinor vertex operators in Siegel gauge and loop amplitude regularization

Enhancement of upconversion luminescence of Er doped Al2O3 films by Ag island films

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Origin of pure spinor superstring

Operator Space of Pure Spinors

Relating Green-Schwarz and extended pure spinor formalisms by similarity transformation

A new first class algebra, homological perturbation and extension of pure spinor formalism for superstring

Towards pure spinor type covariant description of supermembrane — an approach from the double spinor formalism

Operator mapping between RNS and extended pure spinor formalisms for superstring

Pure spinor partition function and the massive superstring spectrum

Dynamics of In atom during InAs/GaAs(0 0 1) growth process

First principles calculation of Indium migration barrier energy on an InAs(001) surface

On semiclassical analysis of pure spinor superstring in an AdS5 × S5 background

Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations

Arsenic source flow rate dependence of minority carrier lifetime in GaAsN grown by chemical beam epitaxy

First-Principles Calculation of the Epitaxial Growth of GaN(0001)

Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

The simulation study for the nanometer-scale selective growth of Si islands on Si(001) windows in ultrathin SiO2 films

Theoretical investigation of migration of group V adatoms on GaAs(0 0 1) surface

First-Principles Calculation of the Dyanamics of Nitrogen on the SiC(0001) Surface during the Epitaxial Growth of GaN(0001)

Role of As 2 molecules on Ga-terminated GaAs(0 0 1) surfaces during the MBE growth

Role of As2 molecules on Ga-terminated GaAs(0 0 1) surfaces during the MBE growth

Arsenic adatom migration on a GaAs(100) surface using a first-principles calculation

First-principle calculation of the epitaxial growth of GaN(0001)

On the possibility of observation of electronic states of metallic atomic wire on Ni(001) surface with angle-resolved photoemission

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