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Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure

Semiconductor science and technology, 2019-03, Vol.34 (3)

2019

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The evolution of structure and magnetoimpedance characteristics of amorphous Co69Fe4Cr4Si12B11 microwires under heat treatment

Journal of magnetism and magnetic materials, 2020-01, Vol.493, p.165681, Article 165681

2020

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Routes for the topological surface state energy gap modulation in antiferromagnetic MnBi2Te4

Physica. B, Condensed matter, 2023-01, Vol.649, p.414443, Article 414443

2023

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Iron silicide-based ferromagnetic metal/semiconductor nanostructures

Physics of the solid state, 2016-11, Vol.58 (11), p.2277-2281

2016

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In situ magneto-optical ellipsometry data analysis for films growth control

Journal of magnetism and magnetic materials, 2017-10, Vol.440, p.196-198

2017

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Surface chemical treatment effect on (111) PbSnTe < In > Topological crystalline insulator films

Applied surface science, 2021-12, Vol.569, p.150930, Article 150930

2021

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Quasi-freestanding graphene on SiC(0001) via cobalt intercalation of zero-layer graphene

Physical review. B, 2021-10, Vol.104 (15), Article 155423

2021

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Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

Journal of magnetism and magnetic materials, 2015-06, Vol.383, p.69-72

2015

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The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films

Journal of magnetism and magnetic materials, 2017-12, Vol.443, p.107-115

2017

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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1325-1331

2020

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Magnetically controlled exciton transfer in hybrid quantum-dot–quantum-well nanostructures

Physical review. B, 2019-07, Vol.100 (3), p.035309, Article 035309

2019

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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.951-955

2020

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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1225-1230

2016

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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

Semiconductors (Woodbury, N.Y.), 2014-03, Vol.48 (3), p.373-376

2014

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Development of in situ magneto-ellipsometry for studying correlation between the optical and magneto-optical properties of ferromagnetic thin films

Journal of physics. Conference series, 2017-10, Vol.903 (1), p.12060

2017

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1207-1210

2012

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850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1075-1078

2013

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Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1316-1320

2012

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High-order diffraction gratings for high-power semiconductor lasers

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.241-246

2012

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InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

Semiconductors (Woodbury, N.Y.), 2010-12, Vol.44 (12), p.1592-1596

2010

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Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells

Semiconductor science and technology, 2007-07, Vol.22 (7), p.814-818

2007

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Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

Semiconductors (Woodbury, N.Y.), 2006-01, Vol.40 (1), p.79-83

2006

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An integrated superconducting phase switch for cosmology instruments

Physica. C, Superconductivity, 2007-11, Vol.466 (1), p.115-123

2007

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Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155413

2010

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Temperature Dependence of the Threshold Current of QW Lasers

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (10), p.1210

Bazhenov, N. L.

2005

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Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure

The evolution of structure and magnetoimpedance characteristics of amorphous Co69Fe4Cr4Si12B11 microwires under heat treatment

Routes for the topological surface state energy gap modulation in antiferromagnetic MnBi2Te4

Iron silicide-based ferromagnetic metal/semiconductor nanostructures

In situ magneto-optical ellipsometry data analysis for films growth control

Surface chemical treatment effect on (111) PbSnTe < In > Topological crystalline insulator films

Quasi-freestanding graphene on SiC(0001) via cobalt intercalation of zero-layer graphene

Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films

Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Magnetically controlled exciton transfer in hybrid quantum-dot–quantum-well nanostructures

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

Development of in situ magneto-ellipsometry for studying correlation between the optical and magneto-optical properties of ferromagnetic thin films

Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

High-order diffraction gratings for high-power semiconductor lasers

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

An integrated superconducting phase switch for cosmology instruments

Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy

Temperature Dependence of the Threshold Current of QW Lasers

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