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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Thin solid films, 2013-05, Vol.534, p.470-473

2013

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Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Physical review. B, Condensed matter and materials physics, 2009-11, Vol.80 (20), Article 205206

2009

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Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

1, 2011

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Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase

Journal of physics. Conference series, 2013-08, Vol.456 (1), p.12027-5

2013

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Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique

Thin solid films, 2008-11, Vol.517 (1), p.353-355

2008

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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Thin solid films, 2010, Vol.518 (6), p.S162-S164

2010

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Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions

Thin solid films, 2008-11, Vol.517 (1), p.87-89

2008

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Cyclotron resonance of two-dimensional electrons in a Si quantum well

Physica. E, Low-dimensional systems & nanostructures, 2010-02, Vol.42 (4), p.1184-1187

2010

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Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

Thin solid films, 2008-11, Vol.517 (1), p.359-361

2008

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Cyclotron resonance in the two-dimensional metallic phase of Si quantum wells

Journal of physics. Conference series, 2011-12, Vol.334 (1), p.012057-5, Article 012057

2011

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Interlayer coherency and angular-dependent magnetoresistance oscillations in quasi-two-dimensional conductors

Synthetic metals, 2003-03, Vol.133 (Complete), p.113-115

2003

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Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures

Thin solid films, 2008-11, Vol.517 (1), p.340-342

2008

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Strain field and related roughness formation in SiGe relaxed buffer layers

Thin solid films, 2006-06, Vol.508 (1), p.117-119

2006

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Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.222-225

2010

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Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S63-S67

2007

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Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Physica. E, Low-dimensional systems & nanostructures, 2008-04, Vol.40 (6), p.1935-1937

2008

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Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S161-S163

2007

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Optical characterization of InAsN single quantum wells grown by RF-MBE

Physica Status Solidi (b), 2004-10, Vol.241 (12), p.2791-2794

2004

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Spin-dependent edge-channel transport in a Si ∕ SiGe quantum Hall system

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (12), Article 121304

2006

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Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

Physica. E, Low-dimensional systems & nanostructures, 2008-04, Vol.40 (6), p.2122-2124

2008

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Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.406-409

2002

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Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.520-523

2006

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Fabrication technology of SiGe hetero-structures and their properties

Surface science reports, 2005-11, Vol.59 (7), p.153-207

2005

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase

Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique

Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions

Cyclotron resonance of two-dimensional electrons in a Si quantum well

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

Cyclotron resonance in the two-dimensional metallic phase of Si quantum wells

Interlayer coherency and angular-dependent magnetoresistance oscillations in quasi-two-dimensional conductors

Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures

Strain field and related roughness formation in SiGe relaxed buffer layers

Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures

Optical characterization of InAsN single quantum wells grown by RF-MBE

Spin-dependent edge-channel transport in a Si ∕ SiGe quantum Hall system

Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing

Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers

Fabrication technology of SiGe hetero-structures and their properties

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