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Hg1-xCdxTe characterization measurements: current practice and future needs

Semiconductor science and technology, 1993-06, Vol.8, p.753

1993

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A model for the charge-pumping current based on small rectangular voltage pulses

Solid-state electronics, 1986-04, Vol.29 (4), p.447-460

1986

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Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistors

Solid-state electronics, 1992-06, Vol.35 (6), p.865-874

1992

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High spatial resolution mapping of resistivity variations in semiconductors

Solid-state electronics, 1992-03, Vol.35 (3), p.423-433

1992

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RII spectroscopy of trap levels in bulk and LPE Hg1-xCdxTe

Semiconductor science and technology, 1993-01, Vol.8, p.S317

1993

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Band-to-band photoluminescence and luminescence excitation in extremely heavily carbon-doped epitaxial GaAs

Physical review. B, Condensed matter, 1994-04, Vol.49 (16), p.10976-10985

1994

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Multiple scattering theory of the density of states in semiconductors

Solid state communications, 1983-01, Vol.46 (3), p.229-233

1983

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Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.46-51

1997

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Examination of mechanical stresses in silicon substrates due to lead–tin solder bumps via micro-Raman spectroscopy and finite element modelling

Semiconductor science and technology, 2002-12, Vol.17 (12), p.1255-1260

2002

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Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

Semiconductor science and technology, 2002-10, Vol.17 (10), p.1081-1089

2002

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Quality Assessment of Sapphire Wafers for X-Ray Crystal Optics Using White Beam Synchrotron X-Ray Topography

Physica status solidi. A, Applied research, 2001-08, Vol.186 (3), p.365-371

2001

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Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Physica status solidi. A, Applied research, 2001-06, Vol.185 (2), p.373-382

2001

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Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy

Journal of materials science. Materials in electronics, 2001-06, Vol.12 (4-6), p.249-253

2001

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Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

MRS proceedings, 1999, Vol.572, Article 327

1999

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Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge-Si Heterostructure Using Total Reflection X-Ray Topography

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.R1-R3

2000

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Hg1-xCdxTe characterization measurements: current practice and future needs

A model for the charge-pumping current based on small rectangular voltage pulses

Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistors

High spatial resolution mapping of resistivity variations in semiconductors

RII spectroscopy of trap levels in bulk and LPE Hg1-xCdxTe

Band-to-band photoluminescence and luminescence excitation in extremely heavily carbon-doped epitaxial GaAs

Multiple scattering theory of the density of states in semiconductors

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

Examination of mechanical stresses in silicon substrates due to lead–tin solder bumps via micro-Raman spectroscopy and finite element modelling

Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

Quality Assessment of Sapphire Wafers for X-Ray Crystal Optics Using White Beam Synchrotron X-Ray Topography

Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy

Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge-Si Heterostructure Using Total Reflection X-Ray Topography

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