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Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75009

2022

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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Semiconductor science and technology, 2011-05, Vol.26 (5), p.055007

2011

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Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

Applied surface science, 2014-03, Vol.295, p.173-179

2014

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Impact of metal grain granularity on three gate-all-around advanced architectures

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.201-205

2021

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Statistical study of the influence of LER and MGG in SOI MOSFET

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45005

2014

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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

Semiconductor science and technology, 2016-06, Vol.31 (7)

2016

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Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs

Semiconductor science and technology, 2014-05, Vol.29 (5), p.54003

2014

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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Semiconductor science and technology, 2012-03, Vol.27 (3), p.39501

2012

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Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12030

2015

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3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

Solid-state electronics, 2012-03, Vol.69, p.43-49

2012

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Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

Solid-state electronics, 2002-05, Vol.46 (5), p.631-638

2002

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Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions

Solid-state electronics, 2004-07, Vol.48 (7), p.1223-1232

2004

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A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Physica. E, Low-dimensional systems & nanostructures, 2007-03, Vol.37 (1), p.168-172

2007

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Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs

Semiconductor science and technology, 2009-05, Vol.24 (5), p.055011-055011 (7)

2009

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Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

Solid-state electronics, 2007-03, Vol.51 (3), p.481-488

2007

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Monte Carlo simulations of III–V MOSFETs

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S202-S205

2004

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Nonequilibrium transport in scaled high electron mobility transistors

Semiconductor science and technology, 2002-06, Vol.17 (6), p.579-584

2002

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Channel mobility and contact resistance in scaled ZnO thin-film transistors

Solid-state electronics, 2020-10, Vol.172, p.107867, Article 107867

2020

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Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.169-172

2005

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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Solid-state electronics, 2018-04, Vol.142 (C), p.31-35

2018

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Boltzmann kinetic equation with correction term for intracollisional field effect

Semiconductor science and technology, 1992-12, Vol.7 (12), p.1446-1452, Article 1446

Kalna, K

1992

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Monte Carlo simulations of δ -doping placement in sub-100 nm implant free InGaAs MOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.285-288

2006

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Review of Current Status of III-V MOSFETs

ECS transactions, 2009, Vol.19 (5), p.275-286

2009

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Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1007-S1011

2009

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Electron capture in quantum wells via scattering by electrons, holes, and optical phonons

Physical review. B, Condensed matter, 1996-12, Vol.54 (24), p.17730-17737

1996

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Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

Impact of metal grain granularity on three gate-all-around advanced architectures

Statistical study of the influence of LER and MGG in SOI MOSFET

Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs

Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs

Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

Monte Carlo simulations of III–V MOSFETs

Nonequilibrium transport in scaled high electron mobility transistors

Channel mobility and contact resistance in scaled ZnO thin-film transistors

Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications

Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Boltzmann kinetic equation with correction term for intracollisional field effect

Monte Carlo simulations of δ -doping placement in sub-100 nm implant free InGaAs MOSFETs

Review of Current Status of III-V MOSFETs

Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study

Electron capture in quantum wells via scattering by electrons, holes, and optical phonons

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