UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

Volltextzugriff (PDF)

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

Volltextzugriff (PDF)

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

Volltextzugriff (PDF)

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

Materials science in semiconductor processing, 2021-04, Vol.125, p.105628, Article 105628

2021

Volltextzugriff (PDF)

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1252-1258

2016

Volltextzugriff (PDF)

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

Materials science in semiconductor processing, 2018-03, Vol.76, p.61-64

2018

Volltextzugriff (PDF)

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Applied surface science, 2018-12, Vol.462 (C), p.799-803

2018

Volltextzugriff (PDF)

Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

Applied surface science, 2017-07, Vol.411, p.144-148

2017

Volltextzugriff (PDF)

GaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering

Materials science in semiconductor processing, 2019-04, Vol.93, p.1-5

2019

Volltextzugriff (PDF)

Enhanced ultraviolet photoresponse of diamond photodetector using patterned diamond film and two-step growth process

Materials science in semiconductor processing, 2019-01, Vol.89, p.110-115

2019

Volltextzugriff (PDF)

Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode

Surfaces and interfaces, 2016-12, Vol.5, p.15-18

2016

Volltextzugriff (PDF)

Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45013

2022

Volltextzugriff (PDF)

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN GaN heterostructure

Semiconductor science and technology, 2015-06, Vol.30 (6), p.65004

2015

Volltextzugriff (PDF)

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35015

2016

Volltextzugriff (PDF)

Metal-oxide-semiconductor AlGaN GaN heterostructure field-effect transistors using TiN AlO stack gate layer deposited by reactive sputtering

Semiconductor science and technology, 2015-01, Vol.30 (1), p.15019

2015

Volltextzugriff (PDF)

Improvement of device isolation using field implantation for GaN MOSFETs

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35019

2016

Volltextzugriff (PDF)

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Superlattices and microstructures, 2018-11, Vol.123, p.274-279

2018

Volltextzugriff (PDF)

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Semiconductor science and technology, 2015-07, Vol.30 (7), p.75003

2015

Volltextzugriff (PDF)

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Solid-state electronics, 2014-09, Vol.99, p.59-64

2014

Volltextzugriff (PDF)

GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

Physica status solidi. C, 2011-02, Vol.8 (2), p.457-460

2011

Volltextzugriff (PDF)

High-sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi-structure

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2117-2120

2007

Volltextzugriff (PDF)

A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure

Physica status solidi. C, 2007-06, Vol.4 (7), p.2654-2657

2007

Volltextzugriff (PDF)

Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure

Superlattices and microstructures, 2021-03, Vol.151, p.106820, Article 106820

2021

Volltextzugriff (PDF)

Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

Superlattices and microstructures, 2021-11, Vol.159, p.107048, Article 107048

2021

Volltextzugriff (PDF)

Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer

Superlattices and microstructures, 2021-08, Vol.156, p.106986, Article 106986

2021

Volltextzugriff (PDF)

1 – 25 von 32

Suche als RSS-Feed

Aktive Filter

ThemaPhysics, Condensed Matter

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(25)
Mit Volltextzugriff
(32)

Publikationsform

Artikel
(32)

Sprache

Englisch
(32)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(32)
Physics
(32)
Science & Technology
(32)
Technology
(25)
Materials Science
(23)
Physics, Applied
(19)
Materials Science, Multidisciplinary
(16)
Engineering
(12)
Engineering, Electrical & Electronic
(12)
Chemistry
(10)
Chemistry, Physical
(10)
Materials Science, Coatings & Films
(7)
Gan
(4)
Gan Mosfet
(4)
Schottky Barrier Diode
(4)
Applied Sciences
(3)
Chemistry, Multidisciplinary
(3)
Electronics
(3)
Exact Sciences And Technology
(3)

14 weitere anzeigen...

Weniger anzeigen...

Kollektion

1 weiteren anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

GaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering

Enhanced ultraviolet photoresponse of diamond photodetector using patterned diamond film and two-step growth process

Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode

Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN GaN heterostructure

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

Metal-oxide-semiconductor AlGaN GaN heterostructure field-effect transistors using TiN AlO stack gate layer deposited by reactive sputtering

Improvement of device isolation using field implantation for GaN MOSFETs

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

High-sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi-structure

A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure

Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure

Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer

Aktive Filter

Suchergebnisse filtern