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A singlet-triplet hole spin qubit in planar Ge

Nature materials, 2021-08, Vol.20 (8), p.1106-1112

2021

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Spin voltage generation through optical excitation of complementary spin populations

Nature materials, 2014-08, Vol.13 (8), p.790-795

2014

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Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Physical review. B, Condensed matter and materials physics, 2013-07, Vol.88 (4), Article 045204

2013

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Preface: Advances in semiconductor materials, technology, and applications

Materials science in semiconductor processing, 2024-11, Vol.182, p.108700, Article 108700

2024

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Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Nano letters, 2015-11, Vol.15 (11), p.7225-7231

2015

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Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

Physical review. B, 2016-08, Vol.94 (8), Article 085202

2016

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CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

ACS photonics, 2021-07, Vol.8 (7), p.2166-2173

2021

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On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength

ACS photonics, 2020-12, Vol.7 (12), p.3423-3429

2020

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Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting

Applied surface science, 2020-04, Vol.509, p.145277, Article 145277

2020

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Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared

ACS photonics, 2018-09, Vol.5 (9), p.3601-3607

2018

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Mid-infrared Integrated Electro-optic Modulator Operating up to 225 MHz between 6.4 and 10.7 μm Wavelength

ACS photonics, 2022-01, Vol.9 (1), p.249-255

2022

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Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

Advanced materials (Weinheim), 2013-08, Vol.25 (32), p.4408-4412

2013

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Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Advanced materials (Weinheim), 2016-02, Vol.28 (5), p.884-888

2016

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Vertical Ge–Si Nanowires with Suspended Graphene Top Contacts as Dynamically Tunable Multispectral Photodetectors

ACS photonics, 2019-03, Vol.6 (3), p.735-742

2019

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Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment

Physical review. B, Condensed matter and materials physics, 2009-02, Vol.79 (7), Article 075323

2009

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3D heteroepitaxy of mismatched semiconductors on silicon

Thin solid films, 2014-04, Vol.557, p.42-49

2014

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Strain Engineering in Highly Mismatched SiGe/Si Heterostructures

Materials science in semiconductor processing, 2017-11, Vol.70, p.117-122

2017

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Emission Engineering in Germanium Nanoresonators

ACS photonics, 2015-01, Vol.2 (1), p.53-59

2015

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Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

Thin solid films, 2008-11, Vol.517 (1), p.380-382

2008

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Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.131-135

2014

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High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates

Physica status solidi. C, 2012-02, Vol.9 (2), p.202-205

2012

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2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Thin solid films, 2006-06, Vol.508 (1), p.351-354

2006

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Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S191-S194

2007

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Electron–electron interaction in p-SiGe/Ge quantum wells

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.184-187

2005

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Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy

Solid state phenomena, 2008-01, Vol.131-133, p.547-552

2008

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A singlet-triplet hole spin qubit in planar Ge

Spin voltage generation through optical excitation of complementary spin populations

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Preface: Advances in semiconductor materials, technology, and applications

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength

Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting

Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared

Mid-infrared Integrated Electro-optic Modulator Operating up to 225 MHz between 6.4 and 10.7 μm Wavelength

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Vertical Ge–Si Nanowires with Suspended Graphene Top Contacts as Dynamically Tunable Multispectral Photodetectors

Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment

3D heteroepitaxy of mismatched semiconductors on silicon

Strain Engineering in Highly Mismatched SiGe/Si Heterostructures

Emission Engineering in Germanium Nanoresonators

Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector

High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates

2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

Electron–electron interaction in p-SiGe/Ge quantum wells

Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy

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