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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Advanced functional materials, 2018-05, Vol.28 (20), p.n/a

2018

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Applied surface science, 2016-01, Vol.360, p.772-776

2016

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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Applied surface science, 2014-03, Vol.295, p.26-30

2014

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High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Nano letters, 2017-01, Vol.17 (1), p.313-321

2017

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Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Applied surface science, 2007-03, Vol.253 (11), p.5161-5165

2007

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Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Applied surface science, 2013-01, Vol.265, p.176-179

2013

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Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Applied surface science, 2011-03, Vol.257 (10), p.4685-4688

2011

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Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Applied surface science, 2013-07, Vol.276, p.782-786

2013

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Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5122-5126

2013

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Oxygen-induced physical property variation of deposited ZnO films by metal–organic chemical vapor deposition

Applied surface science, 2012-09, Vol.258 (22), p.8673-8677

2012

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Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source

Thin solid films, 2012-10, Vol.521, p.253-256

2012

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

Applied surface science, 2008-01, Vol.254 (7), p.2081-2084

2008

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Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2716-2720

2013

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The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Physica. E, Low-dimensional systems & nanostructures, 2014-11, Vol.64, p.57-62

2014

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Study of arsenic doping ZnO thin films grown by metal–organic chemical vapor deposition via x-ray photoelectron spectroscopy

Journal of physics. Condensed matter, 2008-07, Vol.20 (29), p.292202-292202 (5)

2008

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Influence of annealing atmosphere on ZnO thin films grown by MOCVD

Applied surface science, 2006-12, Vol.253 (4), p.2066-2070

2006

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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Journal of materials science. Materials in electronics, 2012, Vol.23 (2), p.542-545

2012

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Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition

Applied surface science, 2008-09, Vol.254 (22), p.7482-7485

2008

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Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

Solid state communications, 2011-12, Vol.151 (24), p.1953-1957

2011

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Study on the optical properties of β-Ga2O3 films grown by MOCVD

Journal of materials science. Materials in electronics, 2017-08, Vol.28 (15), p.10997-11001

2017

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Influence of Sb doping on optical and structural properties of ZnO by MOCVD

Physica status solidi. A, Applications and materials science, 2011-04, Vol.208 (4), p.825-828

2011

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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Oxygen-induced physical property variation of deposited ZnO films by metal–organic chemical vapor deposition

Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Study of arsenic doping ZnO thin films grown by metal–organic chemical vapor deposition via x-ray photoelectron spectroscopy

Influence of annealing atmosphere on ZnO thin films grown by MOCVD

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition

Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

Study on the optical properties of β-Ga2O3 films grown by MOCVD

Influence of Sb doping on optical and structural properties of ZnO by MOCVD

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