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Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Advanced functional materials, 2018-10, Vol.28 (43), p.n/a

2018

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Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Advanced materials (Weinheim), 2022-01, Vol.34 (2), p.e2107206-n/a

2022

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Doping Engineering in the MoS2/SnSe2 Heterostructure toward High‐Rejection‐Ratio Solar‐Blind UV Photodetection

Advanced materials (Weinheim), 2022-10, Vol.34 (43), p.e2206486-n/a

2022

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Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Small (Weinheim an der Bergstrasse, Germany), 2020-02, Vol.16 (7), p.n/a

2020

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Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Advanced functional materials, 2019-09, Vol.29 (38), p.n/a

2019

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Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides

Small (Weinheim an der Bergstrasse, Germany), 2021-01, Vol.17 (4), p.e2006765-n/a

2021

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Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

Physical review. B, Condensed matter and materials physics, 2015-02, Vol.91 (7), Article 075315

2015

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Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

Physical review. B, Condensed matter and materials physics, 2013-03, Vol.87 (12), Article 125203

2013

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Band offset trends in IV–VI layered semiconductor heterojunctions

Journal of physics. Condensed matter, 2022-05, Vol.34 (19), p.195003

2022

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Metal and ligand effects on the stability and electronic properties of crystalline two-dimensional metal-benzenehexathiolate coordination compounds

Journal of physics. Condensed matter, 2018-11, Vol.30 (46), p.465301-465301

2018

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Exploring the Metal–Insulator Transition in (Ga,Mn)As by Molecular Absorption

Nano letters, 2022-11, Vol.22 (22), p.9190-9197

2022

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Donor–Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

Nano letters, 2022-02, Vol.22 (3), p.1331-1337

2022

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Unified theory of direct or indirect band-gap nature of conventional semiconductors

Physical review. B, 2018-12, Vol.98 (24), p.1, Article 245203

2018

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Realistic dimension-independent approach for charged-defect calculations in semiconductors

Physical review. B, 2020-04, Vol.101 (16), p.1, Article 165306

2020

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Correcting charged supercell defect calculations in low-dimensional semiconductors

Physical review. B, 2023-12, Vol.108 (24), Article 245305

2023

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First-principles study of magnetic properties in Mo-doped graphene

Journal of physics. Condensed matter, 2011-08, Vol.23 (34), p.346001-6

2011

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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

Physical review. B, Condensed matter and materials physics, 2010-11, Vol.82 (19), Article 193204

2010

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Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures

Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (19), Article 195328

2012

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Fundamental Identification of Defect‐Related Electron Trap in Hf1−x Zr x O2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial

Physica status solidi. PSS-RRL. Rapid research letters, 2023-01, Vol.17 (1), p.n/a

2023

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Carrier-stabilized hexagonal Ge

Physical review. B, 2021-06, Vol.103 (24), Article 245202

2021

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Origin and designing of large ground-state zero-field splitting of color centers in diamond

Physical review. B, 2024-07, Vol.110 (2), Article 024104

2024

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Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11)

2014

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Overcoming the doping limit in semiconductors via illumination

Physical review. B, 2022-12, Vol.106 (21), Article 214102

2022

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Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions

Journal of semiconductors, 2019-04, Vol.40 (4)

2019

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Temperature Dependent Hydrogen Bond Toward High Emission in an Emerging Indium-Based Perovskite

Small (Weinheim an der Bergstrasse, Germany), 2023-09, Vol.19 (36), p.e2302354-e2302354

2023

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Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Doping Engineering in the MoS2/SnSe2 Heterostructure toward High‐Rejection‐Ratio Solar‐Blind UV Photodetection

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides

Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

Band offset trends in IV–VI layered semiconductor heterojunctions

Metal and ligand effects on the stability and electronic properties of crystalline two-dimensional metal-benzenehexathiolate coordination compounds

Exploring the Metal–Insulator Transition in (Ga,Mn)As by Molecular Absorption

Donor–Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

Unified theory of direct or indirect band-gap nature of conventional semiconductors

Realistic dimension-independent approach for charged-defect calculations in semiconductors

Correcting charged supercell defect calculations in low-dimensional semiconductors

First-principles study of magnetic properties in Mo-doped graphene

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures

Fundamental Identification of Defect‐Related Electron Trap in Hf1−x Zr x O2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial

Carrier-stabilized hexagonal Ge

Origin and designing of large ground-state zero-field splitting of color centers in diamond

Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys

Overcoming the doping limit in semiconductors via illumination

Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions

Temperature Dependent Hydrogen Bond Toward High Emission in an Emerging Indium-Based Perovskite

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