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Strain mapping in layers and devices by electron holography

Physica status solidi. A, Applications and materials science, 2011-03, Vol.208 (3), p.580-583

2011

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Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Thin solid films, 2018-02, Vol.647, p.13-18

2018

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Amorphization, recrystallization and end of range defects in germanium

Thin solid films, 2010-02, Vol.518 (9), p.2307-2313

2010

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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Nano letters, 2014-04, Vol.14 (4), p.1769-1775

2014

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(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Semiconductor science and technology, 2017-02, Vol.32 (2), p.25016

2017

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Room temperature yellow InGaAlP quantum dot laser

Solid-state electronics, 2019-05, Vol.155, p.129-138

2019

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Physica status solidi. A, Applications and materials science, 2016-01, Vol.213 (1), p.19-29

2016

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.244-248

2016

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InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1699-1704

2019

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Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1655-1658

2013

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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Applied surface science, 2012-09, Vol.258 (23), p.9208-9212

2012

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1516-1521

2015

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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.53-57

2014

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Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154 (1-3), p.76-84

2008

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Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Solid-state electronics, 2005-11, Vol.49 (11), p.1734-1744

2005

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Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

Diffusion and defect data, 2011-01, Vol.178-179, p.489-494

2011

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Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114 (SPEC. ISS.), p.174-179

2004

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Diffusion and activation of phosphorus in germanium

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.372-377

2008

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Laser annealing for n +/p junction formation in germanium

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.644-649

2006

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InGaN/GaN heterostructures grown by submonolayer deposition

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1335-1340

2012

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SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124 (SUPPL.), p.113-117

2005

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1281-1285

2012

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.93-97

2010

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Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.118-122

2005

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Strain mapping in layers and devices by electron holography

Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Amorphization, recrystallization and end of range defects in germanium

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Room temperature yellow InGaAlP quantum dot laser

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Diffusion and activation of phosphorus in germanium

Laser annealing for n +/p junction formation in germanium

InGaN/GaN heterostructures grown by submonolayer deposition

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

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