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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Semiconductors (Woodbury, N.Y.), 2005-05, Vol.39 (5), p.552-556

2005

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Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.606-611

2013

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The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Solid state phenomena, 2005-12, Vol.108-109, p.39-44

2005

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Lorentz's Electron Microscopy of Thin Films with Frustrated Magnetic Structure

Solid state phenomena, 2014-04, Vol.215, p.448-453

2014

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Precipitation of boron in silicon on high-dose implantation

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.285-288

2010

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Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.358-364

2013

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Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.462-467

2003

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Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions

Semiconductors (Woodbury, N.Y.), 2010-04, Vol.44 (4), p.525-530

2010

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The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3)

2011

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Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer

Semiconductors (Woodbury, N.Y.), 2009-01, Vol.43 (1), p.52-56

2009

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SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer

Solid state phenomena, 2008-01, Vol.131-133, p.143-148

2008

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Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2007-03, Vol.41 (3), p.291-296

2007

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Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Solid state phenomena, 2008-01, Vol.131-133, p.137-142

2008

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Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

Surface investigation, x-ray, synchrotron and neutron techniques, 2009-10, Vol.3 (5), p.773-780

2009

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Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

Solid state phenomena, 2008-01, Vol.131-133, p.479-484

2008

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Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing

Solid state communications, 2016-12, Vol.247, p.53-57

2016

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Structure and optical properties of silicon nanopowders

Silicon shallow doping by erbium and oxygen recoils implantation

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Lorentz's Electron Microscopy of Thin Films with Frustrated Magnetic Structure

Precipitation of boron in silicon on high-dose implantation

Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions

The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer

SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer

Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing

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