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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

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Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Band alignment and electron traps in Y2O3 layers on (100)Si

Applied physics letters, 2009-09, Vol.95 (13)

2009

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Thin solid films, 2012-05, Vol.520 (14), p.4576-4579

2012

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Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Journal of applied physics, 2006-01, Vol.99 (1)

2006

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Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Thin solid films, 2003-08, Vol.437 (1-2), p.248-256

2003

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Microelectronic engineering, 2019-06, Vol.214, p.104-109

2019

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First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Materials science in semiconductor processing, 2004-01, Vol.7 (4-6), p.227-230

2004

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.313-316

2005

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Demonstration of a graphene-base heterojunction transistor with saturated output current

Journal of applied physics, 2019-06, Vol.125 (23)

2019

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Optical properties and band gap characterization of high dielectric constant oxides

Thin solid films, 2012-05, Vol.520 (14), p.4532-4535

2012

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Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

Microelectronic engineering, 2017-06, Vol.178, p.1-4

2017

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin solid films, 2010-05, Vol.518 (15), p.4380-4384

2010

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Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Journal of applied physics, 2008-05, Vol.103 (10), p.104103-104103-5

2008

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Microelectronic engineering, 2011-07, Vol.88 (7), p.1133-1135

2011

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Titanium-added praseodymium silicate high- k layers on Si(001)

Applied physics letters, 2005-07, Vol.87 (2), p.022902-022902-3

2005

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The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin solid films, 2009-10, Vol.517 (23), p.6334-6336

2009

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CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Thin solid films, 2012-05, Vol.520 (14), p.4518-4522

2012

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin solid films, 2013-06, Vol.536, p.68-73

2013

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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Band alignment and electron traps in Y2O3 layers on (100)Si

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

MIM capacitors using amorphous high-k PrTixOy dielectrics

Demonstration of a graphene-base heterojunction transistor with saturated output current

Optical properties and band gap characterization of high dielectric constant oxides

Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Titanium-added praseodymium silicate high- k layers on Si(001)

The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

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