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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Journal of crystal growth, 2017-09, Vol.474, p.89-95

2017

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Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Journal of crystal growth, 2017-09, Vol.474, p.110-120

2017

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Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Journal of crystal growth, 2017-09, Vol.474, p.104-109

2017

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Dependence of carrier lifetime in germanium on resisitivity and carrier injection level

Applied physics letters, 2006-10, Vol.89 (14), p.142106-142106-3

2006

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Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

Journal of applied physics, 2011-09, Vol.110 (6), p.063534-063534-6

2011

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Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

ECS solid state letters, 2014-04, Vol.3 (6), p.P69-P72

2014

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Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Journal of physics. D, Applied physics, 2013-10, Vol.46 (42), p.425101-1-7

2013

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Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.494-497

2006

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Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

ECS solid state letters, 2014-02, Vol.3 (5), p.X3-X4

2014

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2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1902-1907

2012

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Germanium doping for improved silicon substrates and devices

Journal of crystal growth, 2011-02, Vol.317 (1), p.8-15

2011

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Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

Physica status solidi. C, 2015-08, Vol.12 (8), p.1160-1165

2015

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Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

Applied physics letters, 2005-08, Vol.87 (6), p.061915-061915-2

2005

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Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

Physica status solidi. C, 2014-01, Vol.11 (1), p.32-36

2014

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Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

ECS journal of solid state science and technology, 2016-01, Vol.5 (4), p.P3108-P3137

2016

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Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

ECS solid state letters, 2013-07, Vol.2 (10), p.P89-P90

2013

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Ab-initio simulation of self-interstitial in germanium

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.328-331

2008

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Molecular dynamics simulation of intrinsic point defects in germanium

Journal of crystal growth, 2007-05, Vol.303 (1), p.12-17

2007

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Carrier lifetime studies in Ge using microwave and infrared light techniques

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.781-787

2006

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On the characterisation of grown-in defects in Czochralski-grown Si and Ge

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.24-31

2008

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Metal implants-dependent carrier recombination characteristics in Ge

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.291-294

2008

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Impact of oxygen related extended defects on silicon diode characteristics

Journal of applied physics, 1995-06, Vol.77 (11), p.5669-5676

1995

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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

Journal of applied physics, 2002-02, Vol.91 (4), p.2493-2498

2002

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A deep-level transient spectroscopy study of transition metals in n-type germanium

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.559-563

2006

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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Dependence of carrier lifetime in germanium on resisitivity and carrier injection level

Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

Germanium doping for improved silicon substrates and devices

Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

Ab-initio simulation of self-interstitial in germanium

Molecular dynamics simulation of intrinsic point defects in germanium

Carrier lifetime studies in Ge using microwave and infrared light techniques

On the characterisation of grown-in defects in Czochralski-grown Si and Ge

Metal implants-dependent carrier recombination characteristics in Ge

Impact of oxygen related extended defects on silicon diode characteristics

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

A deep-level transient spectroscopy study of transition metals in n-type germanium

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