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Effect of structural disorder on quantum oscillations in graphite

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Deviation of the AlGaAs lattice constant from Vegard's law

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10), p.1461-1465

2001

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AGET, the GET front-end ASIC, for the readout of the Time Projection Chambers used in nuclear physic experiments

2011 IEEE Nuclear Science Symposium Conference Record, 2011, p.745-749

2011

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GET: A Generic Electronic System for TPCs for Nuclear Physics Experiments

Physics procedia, 2012, Vol.37, p.1799-1804

2012

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High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Journal of electronic materials, 2005-06, Vol.34 (6), p.795-803

2005

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Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces

Applied surface science, 2001-09, Vol.181 (1), p.94-102

2001

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Influence of N 2 background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004, Vol.22 (3), p.1544-1548

2004

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On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique

Journal of physics. D, Applied physics, 2000-10, Vol.33 (20), p.2521-2526, Article 2521

2000

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Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by x-ray diffraction

Applied physics letters, 1987-04, Vol.50 (15), p.980-982

1987

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Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems

Journal of applied physics, 1993-01, Vol.73 (2), p.619-626

1993

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Formation of misfit dislocations in strained-layer GaAs/InxGa1−xAs/GaAs heterostructures during postfabrication thermal processing

Journal of applied physics, 2003-12, Vol.94 (12), p.7496-7501

2003

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Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction

Journal of electronic materials, 2006-06, Vol.35 (6), p.1481-1486

2006

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Millikelvin de Haas–van Alphen and magnetotransport studies of graphite

Physical review. B, Condensed matter and materials physics, 2011-01, Vol.83 (3), Article 035122

2011

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Edge-type misfit dislocations produced by thermal processing of pre-relaxed InxGa1−xAs/GaAs heterostructures

Journal of applied physics, 2000-11, Vol.88 (10), p.5975-5980

2000

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Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures

Applied physics letters, 1996-01, Vol.68 (5), p.673-674

1996

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Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy

Applied physics letters, 1998-12, Vol.73 (26), p.3899-3901

1998

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Relaxation and recovery of highly strained InGaAs/GaAs quantum wells

Applied physics letters, 1989-11, Vol.55 (19), p.1984-1986

1989

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A force balance approach to determining dislocation configurations

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2002, p.209-212

2002

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X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily

Journal of physics. D, Applied physics, 1993-04, Vol.26 (4A), p.A181-A187

1993

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Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Applied physics letters, 1988-07, Vol.53 (2), p.113-115

1988

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Passivation of interface defects in lattice-mismatched InGaAs/GaAs heterostructures with hydrogen

Journal of applied physics, 1989-07, Vol.66 (2), p.968-970

1989

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Wafer curvature in molecular beam epitaxy grown heterostructures

Physical review. B, Condensed matter, 2003-02, Vol.67 (5), Article 054108

2003

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Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy

Journal of electronic materials, 1991-10, Vol.20 (10), p.855-859

1991

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Photoluminescence in strained InGaAs-GaAs heterostructures

Journal of applied physics, 1987-11, Vol.62 (9), p.3898-3901

1987

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Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

Physical review. B, Condensed matter and materials physics, 2004-08, Vol.70 (7), p.075317.1-075317.8, Article 075317

2004

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Effect of structural disorder on quantum oscillations in graphite

Deviation of the AlGaAs lattice constant from Vegard's law

AGET, the GET front-end ASIC, for the readout of the Time Projection Chambers used in nuclear physic experiments

GET: A Generic Electronic System for TPCs for Nuclear Physics Experiments

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces

Influence of N 2 background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs

On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique

Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by x-ray diffraction

Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems

Formation of misfit dislocations in strained-layer GaAs/InxGa1−xAs/GaAs heterostructures during postfabrication thermal processing

Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction

Millikelvin de Haas–van Alphen and magnetotransport studies of graphite

Edge-type misfit dislocations produced by thermal processing of pre-relaxed InxGa1−xAs/GaAs heterostructures

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy

Relaxation and recovery of highly strained InGaAs/GaAs quantum wells

A force balance approach to determining dislocation configurations

X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily

Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Passivation of interface defects in lattice-mismatched InGaAs/GaAs heterostructures with hydrogen

Wafer curvature in molecular beam epitaxy grown heterostructures

Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy

Photoluminescence in strained InGaAs-GaAs heterostructures

Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

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