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Is sulfur a donor in diamond?

Applied physics letters, 2000-02, Vol.76 (6), p.757-759

2000

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Damage threshold for ion-beam induced graphitization of diamond

Applied physics letters, 1995-08, Vol.67 (9), p.1194-1196

1995

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Growth and characterization of phosphorus doped n-type diamond thin films

Diamond and related materials, 1998-02, Vol.7 (2), p.540-544

1998

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Electrically active sulfur-defect complexes in sulfur implanted diamond

Journal of applied physics, 2003-09, Vol.94 (6), p.3923-3930

2003

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Electrical isolation of GaN by ion implantation damage: Experiment and model

Applied physics letters, 1999-04, Vol.74 (17), p.2441-2443

1999

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Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation

Diamond and related materials, 1998-10, Vol.7 (10), p.1429-1432

1998

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Growth mechanisms of DLC films from C + ions: experimental studies

Diamond and related materials, 1995-04, Vol.4 (4), p.318-323

1995

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Effects of point defects on the electrical properties of doped diamond

Diamond and related materials, 2000-04, Vol.9 (3-6), p.1051-1056

2000

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Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

Diamond and related materials, 2005-03, Vol.14 (3-7), p.350-354

2005

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Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Physica status solidi. A, Applied research, 2001-08, Vol.186 (2), p.281-289

2001

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Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures

Diamond and related materials, 2004-04, Vol.13 (4), p.713-717

2004

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Thermally activated electrical conductivity in thin GaN epitaxial films

Applied physics letters, 2000-03, Vol.76 (11), p.1431-1433

2000

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Can n-type doping of diamond be achieved by Li or Na ion implantation ?

Applied physics letters, 1993-11, Vol.63 (18), p.2502-2504

1993

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Diffusion of Lithium in Diamond

Physica status solidi. A, Applied research, 2002-10, Vol.193 (3), p.508-516

2002

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Instantaneous annealing of CVD diamond during high dose-rate ion implantation

Diamond and related materials, 1999-03, Vol.8 (2), p.877-881

1999

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Structural, optical and electrical properties of nanodiamond films deposited by HFCVD on borosilicate glass, fused silica and silicon at low temperature

Physica status solidi. A, Applied research, 2004-09, Vol.201 (11), p.2499-2502

2004

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Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defects

Diamond and related materials, 2002-03, Vol.11 (3-6), p.316-322

2002

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Phosphorus site after CIRA implantation of type IIa diamond

Diamond and related materials, 2001-03, Vol.10 (3), p.580-584

2001

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Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

Physica status solidi. A, Applied research, 2003-09, Vol.199 (1), p.82-86

2003

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ESR Study of Phosphorus Implanted Type IIa Diamond

Physica status solidi. A, Applied research, 2000-09, Vol.181 (1), p.5-10

2000

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Loss of electrical conductivity in boron-doped diamond due to ion-induced damage

Applied physics letters, 1997-02, Vol.70 (8), p.999-1001

1997

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Nature of damage in diamond implanted at low temperatures

Diamond and related materials, 1995-05, Vol.4 (5), p.569-574

1995

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The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.683-687

1999

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Nitrogen doping of diamond by ion implantation

Diamond and related materials, 1997-03, Vol.6 (2), p.516-520

1997

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Doping of polycrystalline diamond by boron ion implantation

Applied physics letters, 1994-05, Vol.64 (19), p.2532-2534

1994

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Is sulfur a donor in diamond?

Damage threshold for ion-beam induced graphitization of diamond

Growth and characterization of phosphorus doped n-type diamond thin films

Electrically active sulfur-defect complexes in sulfur implanted diamond

Electrical isolation of GaN by ion implantation damage: Experiment and model

Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation

Growth mechanisms of DLC films from C + ions: experimental studies

Effects of point defects on the electrical properties of doped diamond

Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures

Thermally activated electrical conductivity in thin GaN epitaxial films

Can n-type doping of diamond be achieved by Li or Na ion implantation ?

Diffusion of Lithium in Diamond

Instantaneous annealing of CVD diamond during high dose-rate ion implantation

Structural, optical and electrical properties of nanodiamond films deposited by HFCVD on borosilicate glass, fused silica and silicon at low temperature

Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defects

Phosphorus site after CIRA implantation of type IIa diamond

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

ESR Study of Phosphorus Implanted Type IIa Diamond

Loss of electrical conductivity in boron-doped diamond due to ion-induced damage

Nature of damage in diamond implanted at low temperatures

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Nitrogen doping of diamond by ion implantation

Doping of polycrystalline diamond by boron ion implantation

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