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High Resolution Modeling Of Aperture Structure And Flow Path In Rock Fracture

Water Dynamics: 3rd International Workshop on Water Dynamics (AIP Conference Proceedings Volume 833), 2006, Vol.833, p.173-176

2006

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Transparent conductive Cd3TeO6 thin films with perovskite structure

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-03, Vol.24 (2), p.L4-L6

2006

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Improvement of Dielectric Properties in Iron-Containing Ferroelectrics

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.5030

2005

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Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Applied physics letters, 2002-09, Vol.81 (14), p.2563-2565

2002

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Reduction of Dielectric Losses in Pb(Fe 1/2 Nb 1/2 )O 3 -Based Ferroelectric Ceramics

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.5035

2005

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Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Journal of crystal growth, 2002-12, Vol.246 (1), p.15-20

2002

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Development of an optical flying head for a next-generation magneto-optical recording system

Microsystem technologies, 2005-08, Vol.11 (8-10), p.1081-1084

2005

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Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

Applied surface science, 2003-06, Vol.216 (1-4), p.549-553

2003

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A Magnetic Coil Suitable for Magneto-Optical Recording with a Large Working Distance

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7S), p.4736

2004

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Optical Flying Head System that Featuring Dual-Stage Tracking for Use in High-Density Magneto-Optical Recording

Japanese Journal of Applied Physics, 2003-02, Vol.42 (Part 1, No. 2B), p.873-874

2003

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An optical flying head system that features a dual-stage tracking mechanism for use in high-density MO recording

International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 2002, p.40-42

2002

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An experiment study of electromagnetic field distribution over 2D communication system

2009 Asia Pacific Microwave Conference, 2009, p.1266-1269

2009

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Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.21-39

2008

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Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

Applied physics letters, 2006-12, Vol.89 (25)

2006

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Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.649-654

2008

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IEEE_Xplore

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure

Japanese Journal of Applied Physics, 2003-04, Vol.42 (Part 2, No. 4B), p.L419-L422

2003

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High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2809-2815

2006

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IEEE_Xplore

Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Nature materials, 2004-06, Vol.3 (6), p.361-364

2004

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Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

AIP advances, 2018-05, Vol.8 (5), p.055922-055922-5

2018

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Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode

Applied physics letters, 2005-06, Vol.86 (23)

2005

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Device structures and carrier transport properties of advanced CMOS using high mobility channels

Solid-state electronics, 2007-04, Vol.51 (4), p.526-536

2007

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High Resolution Modeling Of Aperture Structure And Flow Path In Rock Fracture

Transparent conductive Cd3TeO6 thin films with perovskite structure

Improvement of Dielectric Properties in Iron-Containing Ferroelectrics

Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Reduction of Dielectric Losses in Pb(Fe 1/2 Nb 1/2 )O 3 -Based Ferroelectric Ceramics

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Development of an optical flying head for a next-generation magneto-optical recording system

Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

A Magnetic Coil Suitable for Magneto-Optical Recording with a Large Working Distance

Optical Flying Head System that Featuring Dual-Stage Tracking for Use in High-Density Magneto-Optical Recording

An optical flying head system that features a dual-stage tracking mechanism for use in high-density MO recording

An experiment study of electromagnetic field distribution over 2D communication system

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure

High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode

Device structures and carrier transport properties of advanced CMOS using high mobility channels

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