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Quantitative Thermometry of Nanoscale Hot Spots

Nano letters, 2012-02, Vol.12 (2), p.596-601

2012

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Nanoscale thermometry by scanning thermal microscopy

Review of scientific instruments, 2016-07, Vol.87 (7)

2016

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III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Journal of applied physics, 2015-04, Vol.117 (14)

2015

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Vertical III–V Nanowire Device Integration on Si(100)

Nano letters, 2014-04, Vol.14 (4), p.1914-1920

2014

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Reversible and Controllable Switching of a Single-Molecule Junction

Small (Weinheim an der Bergstrasse, Germany), 2006-08, Vol.2 (8-9), p.973-977

2006

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Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

Small (Weinheim an der Bergstrasse, Germany), 2006-01, Vol.2 (1), p.85-88

2006

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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Nanotechnology, 2019-02, Vol.30 (8), p.84004

2019

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Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

Beilstein journal of nanotechnology, 2018-01, Vol.9 (1), p.129-136

2018

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InAs nanowire growth on oxide-masked 〈111〉 silicon

Journal of crystal growth, 2012-04, Vol.344 (1), p.31-37

2012

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Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Beilstein journal of nanotechnology, 2015, Vol.6 (1), p.2193-2206

2015

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Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface

Nature materials, 2014-10, Vol.13 (10), p.947-953

2014

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Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Nano letters, 2009-01, Vol.9 (1), p.173-177

2009

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Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography

Nano letters, 2009-11, Vol.9 (11), p.3837-3843

2009

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Charge Transport Through a Cardan‐Joint Molecule

Small (Weinheim an der Bergstrasse, Germany), 2008-12, Vol.4 (12), p.2229-2235

2008

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Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

Small (Weinheim an der Bergstrasse, Germany), 2007-02, Vol.3 (2), p.230-234

2007

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Bonding and Electronic Transport Properties of Fullerene and Fullerene Derivatives in Break-Junction Geometries

Small (Weinheim an der Bergstrasse, Germany), 2013-01, Vol.9 (2), p.209-214

2013

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Lateral InAs/Si p-Type Tunnel FETs Integrated on Si-Part 2: Simulation Study of the Impact of Interface Traps

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4240-4247

2016

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Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

Nano letters, 2017-04, Vol.17 (4), p.2596-2602

2017

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Small Charging Energies and g‑Factor Anisotropy in PbTe Quantum Dots

Nano letters, 2022-09, Vol.22 (17), p.7049-7056

2022

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Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

Nano letters, 2013-03, Vol.13 (3), p.917-924

2013

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Toward Nanowire Electronics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2827-2845

2008

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Selective Area Growth of PbTe Nanowire Networks on InP

Advanced functional materials, 2022-12, Vol.32 (51), p.n/a

2022

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Lateral InAs/Si p-Type Tunnel FETs Integrated on Si-Part 1: Experimental Devices

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4233-4239

2016

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Quantitative Thermometry of Nanoscale Hot Spots

Nanoscale thermometry by scanning thermal microscopy

III–V compound semiconductor transistors—from planar to nanowire structures

Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Vertical III–V Nanowire Device Integration on Si(100)

Reversible and Controllable Switching of a Single-Molecule Junction

Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

InAs nanowire growth on oxide-masked 〈111〉 silicon

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface

Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography

Charge Transport Through a Cardan‐Joint Molecule

Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

Bonding and Electronic Transport Properties of Fullerene and Fullerene Derivatives in Break-Junction Geometries

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si-Part 2: Simulation Study of the Impact of Interface Traps

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

Small Charging Energies and g‑Factor Anisotropy in PbTe Quantum Dots

Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

Toward Nanowire Electronics

Selective Area Growth of PbTe Nanowire Networks on InP

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si-Part 1: Experimental Devices

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