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A contribution to the theory of beam-induced current characterization of dislocations

Journal of applied physics, 1991-05, Vol.69 (9), p.6387-6393

PASEMANN, L

1991

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Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diode

Physica status solidi. A, Applied research, 1984-07, Vol.84 (1), p.133-142

Pasemann, L.

1984

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EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.K199-K203

Pasemann, L.

1982

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Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Physica status solidi. A, Applied research, 1987-08, Vol.102 (2), p.819-828

1987

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Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Physica status solidi. A, Applied research, 1987-06, Vol.101 (2), p.611-618

1987

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Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Physica status solidi. A, Applied research, 1984-10, Vol.85 (2), p.641-648

1984

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Interpretation of the EBIC contrast of dislocations in silicon

Physica status solidi. A, Applied research, 1982-03, Vol.70 (1), p.197-209

1982

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Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

Physica status solidi. A, Applied research, 1983-11, Vol.80 (1), p.135-139

1983

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The influence of the residual impurities (C, O) on the crystal structure of GaAs

Physica status solidi. A, Applied research, 1981-11, Vol.68 (1), p.261-267

1981

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A contribution to the theory of beam-induced current characterization of dislocations

Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diode

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Interpretation of the EBIC contrast of dislocations in silicon

Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

The influence of the residual impurities (C, O) on the crystal structure of GaAs

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